2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022
DOI: 10.1109/ispsd49238.2022.9813676
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Novel Si-SiC hybrid switch and its design optimization path

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Cited by 5 publications
(3 citation statements)
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“…SiC-based converters remain, however, one of the most expensive components in BEVs, and the one most likely to fail after the battery pack [11]. Hybrid solutions combining different types of devices in parallel have been proposed in [14], [17], [19], to combine the properties of both devices obtaining an average efficiency (see Fig. 2).…”
Section: Vehicle Model Descriptionmentioning
confidence: 99%
See 1 more Smart Citation
“…SiC-based converters remain, however, one of the most expensive components in BEVs, and the one most likely to fail after the battery pack [11]. Hybrid solutions combining different types of devices in parallel have been proposed in [14], [17], [19], to combine the properties of both devices obtaining an average efficiency (see Fig. 2).…”
Section: Vehicle Model Descriptionmentioning
confidence: 99%
“…Recently, a new converter switching concept has been introduced in [7], [14]: the AHS is an extension of the Cross Switch (XS) Hybrid concept, originally comprising a fixed parallel arrangement of Silicon Insulated-Gate Bipolar Transistors (IGBTs) and unipolar SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOS-FETs), hence relying on the different electrical characteristics of both devices. In the AHS, the Si-IGBT to the SiC-MOSFET ratio is dynamically adjusted through the gate units depending on the load conditions, resulting in a variable configuration of the converter.…”
Section: Introductionmentioning
confidence: 99%
“…In the 1200V blocking voltage devices, the available technologies are Si IGBT and SiC MOSFET. The Si/SiC hybrid switch (HyS) is the combination of these two technologies to take advantage of the best characteristics of the SiC MOSFET (fast commutation, low switching losses and low conduction losses at small currents), and those of the IGBT (low voltage drop at high currents and lower cost than SiC) [1]- [3]. The typical circuit of this HyS is shown in Figure 1, where we specifically represent the parasitic inductance between the components, a key element in the dynamics studied in this paper.…”
Section: Introductionmentioning
confidence: 99%