Novel Semiconductor Optical Amplifier with Large Gain and High Saturation Output Power

Yu, Shengrui; Gallet, Antonin; Elfaiki, Hajar; Dahdah, Nayla El; Brenot, R.

doi:10.1109/ecoc52684.2021.9605952

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…At a given bias current, the output power of the SOA increases linearly with the input power; this linear relationship corresponds to the small-signal gain ( G 0 ), which is expressed as follows [ 36 ]:

where

is the material gain coefficient,

is the internal loss coefficient, τ is the carrier lifetime, and L is the cavity length. In practice, a key parameter is the saturated output power (

), which is typically defined as the output power corresponding to a 3 dB decrease in gain, as expressed by [ 37 ]:

…”

Section: Resultsmentioning

confidence: 99%

“…where g 0 is the material gain coefficient, g 0 is the internal loss coefficient, τ is the carrier lifetime, and L is the cavity length. In practice, a key parameter is the saturated output power (P sat ), which is typically defined as the output power corresponding to a 3 dB decrease in gain, as expressed by [37]:…”

Section: Simulation and Design Of The Soa Structurementioning

confidence: 99%

See 1 more Smart Citation

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

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Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.

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where

is the material gain coefficient,

is the internal loss coefficient, τ is the carrier lifetime, and L is the cavity length. In practice, a key parameter is the saturated output power (

), which is typically defined as the output power corresponding to a 3 dB decrease in gain, as expressed by [ 37 ]:

…”

Section: Resultsmentioning

confidence: 99%

Section: Simulation and Design Of The Soa Structurementioning

confidence: 99%

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

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“…These power-efficient PICs are integrated into modular and scalable subsystems, and they are subsequently utilized to demonstrate novel data centre networks with highly deterministic sub-microsecond latency to enable maximum congestion reduction, full bisection bandwidth (lower congestion), and guaranteed quality of service while reducing cost per Gbps. DYNAMOS builds on recent developments in III-V optoelectronics 1 , thick silicon-oninsulator (SOI) waveguide technology [2][3][4] , and silicon organic hybrid (SOH) modulators [5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Development of dynamic data centre networks and fast-tunable lasers in the DYNAMOS project

Aalto,

Bryant,

Harjanne

et al. 2024

Optical Interconnects XXIV

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This paper summarizes the goals and first results of the EU-funded project DYNAMOS, which develops fast (1 ns) and widely tunable (>110 nm) lasers, energy-efficient (~ fJ/bit), broadband (100 GHz) electro-optic modulators, and highspeed (1 ns) broadcast-and-select packet switches as photonic integrated circuits. These components are used to demonstrate novel data centre networks with highly deterministic sub-microsecond latency to enable maximum congestion reduction, full bisection bandwidth and guaranteed quality of service while reducing cost per Gbps. The methods to achieve the goals are first described. Then the first results from optical amplifiers, modulators, and lasers are reported with the main focus on lasers that can be tuned fast over a wide wavelength range.

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