Novel RF MEMS Switches

Lucyszyn, S.; Pranonsatit, S.; Choi, Jah Yeon; Moseley, Richard; Yeatman, Eric M.; Holmes, Andrew S.

doi:10.1109/apmc.2007.4554610

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…The damping coefficient of the switch is used to switching and settling time of the switches. The meanders proposed in the switch should contain minimum damping [27] and is given as

b = \frac{3}{2 π} \frac{μ A^{2}}{g_{0}^{3}}

where µ is the viscosity of the air, A is the area of the beam and g 1 is the initial gap between the beam and dielectric and the damping coefficient obtained from (22) is 4.79 × 10 −5 and the quality factor obtained by (22) is presented in Table 7

Q = \frac{K_{total}}{ω_{0} b}

Among the different materials presented in Table 8, the proposed materials except aluminium and PTFE shows low quality factor <0.5 and suffers low switching time. The copper, chromium, titanium and platinum show better quality factor than gold but using these materials the switch suffers from high pull‐in voltage due to high Young's modulus.…”

Section: Resultsmentioning

confidence: 99%

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Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

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This study reports the design and analysis of novel step structure RF micro-electromechanical system (MEMS) switch for low pull-in voltage, low insertion loss and high isolation by using uniform single meander. The central beam of the membrane is designed with 0.5 µm lower than the side beams to form a step-down structure which reduces the pull-in voltage. Stress analysis, electromechancial, switching time, quality factor and RF analysis have done to understand the behavioural characteristics of the proposed step-down switch. The analysis has been carried out for different beam and dielectric materials among them switch with gold material exhibits low pull-in voltage of 4.7 V, low insertion loss <1 dB and high isolation of −38.3 dB at 28.2 GHz for silicon nitride. The switch also shows good quality factor of 0.95 for gold material along with high capacitance ratio of 132. The upstate capacitance of 56.8 pF contributes low return loss and made the switch to transmit the signal up to 26.2 GHz and provides 7.2 pF of downstate capacitance to produce high isolation at 26.2 GHz which is efficiently used for Kband satellite applications.

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“…The damping coefficient of the switch is used to switching and settling time of the switches. The meanders proposed in the switch should contain minimum damping [27] and is given as

b = \frac{3}{2 π} \frac{μ A^{2}}{g_{0}^{3}}

Q = \frac{K_{total}}{ω_{0} b}

Section: Resultsmentioning

confidence: 99%

“…The damping coefficient of the switch is used to switching and settling time of the switches. The meanders proposed in the switch should contain minimum damping [27] and is given as…”

Section: Quality Factormentioning

confidence: 99%

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

show abstract

“…It is obtained as the switch membrane connected by the four meanders oscillated with the frequency of 83.5 KHz and 1.03 MHz for non-perforated and perforated membrane and these values are substituted in Eq. 12 to get the quality factor [22].…”

Section: Quality Factormentioning

confidence: 99%

Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications

Kumar

Rao

Balaji

et al. 2021

Trans. Electr. Electron. Mater.

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RF MEMS switches have been employed in many commercial and defense applications due to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF MEMS shunt switch is designed with perforations and without perforations and simulated using iterative meanders for millimeter wave 5G applications. The proposed iterative meander offers a low spring-constant of 0.68 N/m and reduces the pull-in-voltage upto 1.8 V. The proposed perforated switch design is more reliable which operates with less transition time of 11.2 µs with a quality factor of 1.69. The switch possesses high capacitance ratio of 63. During ON condition, the switch shows low insertion loss of − 0.24 dB at 41 GHz and high isolation of − 46.7 dB at 38 GHz. The performance of the switch is analyzed by simulating it using COMSOL Multiphysics 5.2v (FEM tool). The obtained simulation results shows close approximation with the theoretical results and the switch is efficiently used for 5G millimeter wave applications.

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Analysis on Selection of Beam Material for Novel Step Structured RF-MEMS Switch used for Satellite Communication Applications

Sravani

Rao

2018

Trans. Electr. Electron. Mater.

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Novel RF MEMS Switches

Cited by 10 publications

References 11 publications

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications

Analysis on Selection of Beam Material for Novel Step Structured RF-MEMS Switch used for Satellite Communication Applications

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