Novel programmed defect mask blanks for ML defect understanding and characterization

Matsui, K.; Takagi, Noriaki; Isogawa, Takeshi; Kodera, Yutaka; Sakata, Yo; Akima, Shinji

doi:10.1117/12.975824

Cited by 4 publications

(4 citation statements)

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“…6,9 According to previous research, ML defect printability depends on shape of defect source and ML decoration model. 7 Generally, small sizes of ML defects have been focused on ML defect printability study, however, it is assumed to be difficult to detect thin and wide defect by blank inspection tool.…”

Section: -1 Results Of More Complex Defect Shape Formationmentioning

confidence: 99%

“…On the other hand, our new defect fabrication method has only one process for defect formation, as reported previously. 6 The method enables to fabricate various sizes and shapes of defect source by proper process for required defect types from several processes. After defect fabrication, defect sizes and shapes were measured and characterized by SEM and AFM.…”

Section: -1 Programmed ML Defect Blank Fabricationmentioning

confidence: 99%

“…In the past couple of years, we developed new programmed defect fabrication method and showed flexibility to fabricate both rectangle shape defects, which have been fabricated by conventional method, and natural-like programmed defects which represents real situation. 6 In this paper, it was attempted to fabricate more complex defect shapes and very shallow defects to show a flexibility of the defect fabrication method. Then defect shape characterization work was conducted by AFM to investigate defect shape transition model.…”

Section: Introductionmentioning

confidence: 99%

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Exploring probability of shallow ML defect impact to defect assurance

Matsui

Takagi²,

Takahashi

et al. 2013

SPIE Proceedings

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EUV blank defect is one of the key issues the industry has to overcome to implement EUV lithography for HVM (high volume manufacturing). Several inspection techniques for EUV blank defect detection have been proposed, but the blank defect criteria for EUV mask is assumed to be very tight, thus, high sensitivity performance is required for blank inspection. However, it is important how the blank inspection tool to be assessed with appropriate test blanks with properly characterized defects. New programmed defect fabrication method has been introduced and verified that the method enables to fabricate natural-like programmed defects. In this study, it was attempted to fabricate more complex shape defects and investigated how multilayer defects are grown during multilayer deposition. Then, printability simulation was conducted for 3 different defect transition models, and critical multilayer defect shapes and sizes were discussed based on the simulation work.

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Section: -1 Results Of More Complex Defect Shape Formationmentioning

confidence: 99%

Section: -1 Programmed ML Defect Blank Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Exploring probability of shallow ML defect impact to defect assurance

Matsui

Takagi²,

Takahashi

et al. 2013

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

show abstract

“…Actinic wave length inspection tool has developed for phase defect inspection [3][4][5][6] . To evaluate inspection tool sensitivity, PDM is improtant 7 . Influence of phase defect to wafer print has studied 8 .…”

Section: Introductionmentioning

confidence: 99%

Challenge for under 40nm size pattern making for EUV mask

et al. 2013

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Extreme Ultraviolet Lithography (EUVL) is a promising technology for the next generation lithography. It will be applied for half pitch 16nm node and beyond. The pattern resolution of recent EUV lithography is around hp20nm and next target is hp16nm. Although present requirement for EUV mask pattern resolution is hp64 nm, there is a special request to make under 40nm size pattern for EUV mask. One of examples is programmed phase defect mask (PDM).Phase defect of EUV blank affects large influence to wafer print result. Blank inspection is one of the key technology for EUV mask fabrication. To evaluate blank inspection tool, program defect mask is essential. Other examples are EUV mask for EUV diffraction exposure tool and EUV microscope evaluation. These masks need absorber pattern resolution of 30nm and smaller. In this paper, we will present process development results targeting 30nm size pattern.Programmed defect size achieved to 20nm width (FWHM: width at half maximum), 1.0nm height, both pit and bump defect. Absorber pattern resolution achieved 30nm half pitch. Not only simple dense line pattern, we fabricated radial pattern and any angle pattern.

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