Abstract:Recently, the dramatic acceleration in dimensional shrink of DRAM memory devices has been observed. For sub 60 nm memory device, we suggest the following method of optical proximity correction (OPC) to enhance the critical dimension uniformity (CDU). In order to enhance CD variation of each transistor, hundreds of thousand transistor CD data were used through design based metrology (DBM) system. In a traditional OPC modeling method, it is difficult to realize enhancement of CD variation on chip because of the … Show more
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