Novel precursors for the growth of α-In2S3: trisdialkyldithiocarbamates of indium

O’Brien, Paul; Otway, David J.; Walsh, John R.

doi:10.1016/s0040-6090(97)00691-3

Cited by 107 publications

(52 citation statements)

References 14 publications

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“…Precursor Synthesis: Precursors were synthesized according to literature methods [45]. The dithiocarbamato ligand sodium salts were synthesized by the reaction of NaOH with the relevant amine and CS 2 , before in-situ reaction with the desired metal chloride.…”

Section: Methodsmentioning

confidence: 99%

Deposition of Ni and Pd Sulfide Thin Films via Aerosol‐Assisted CVD

O’Brien

Waters

2006

Chemical Vapor Deposition

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Thin films of nickel sulfide (NiS 1.03 , NiS 2 ,a-Ni 7 S 6 , or mixtures thereof) and palladium sulfide (PdS, Pd 16 S 7 , Pd 4 S, or mixtures thereof) have been prepared by aerosol-assisted (AA)CVD using dithiocarbamate precursors of the type M(S 2 CNRR') 2 (M = Ni, Pd; RR' = Et 2 , MeEt, Me n Bu, or Me n Hex). The solid-state structure of Ni(S 2 CNMe n Bu) 2 , was determined by X-ray single-crystal diffraction and is characteristic of known nickel dithiocarbamates. Films were grown on glass substrates at temperatures of 400-525°C and characterized by X-ray diffraction (XRD), energy dispersive analysis of X-rays (EDAX), and scanning electron microscopy (SEM).

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Section: Methodsmentioning

confidence: 99%

Deposition of Ni and Pd Sulfide Thin Films via Aerosol‐Assisted CVD

O’Brien

Waters

2006

Chemical Vapor Deposition

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“…[116,117] Films of indium sulfide have been grown from dimethyl-, diethyl-, or dineopentyl-indium diethyldithiocarbamates (R 2 InS 2 CNEt 2 with R = Me, Et, or Np), which melt at 140 C, 57 C, and 44 C, respectively, and are air-sensitive compounds. [115] The films were grown on (100)-GaAs substrates, using a cold-wall, low-pressure reactor.…”

Section: From Dithiocarbamatesmentioning

confidence: 99%

“…The analogous gallium precursors proved less effective when applied to the production of gallium sulfide. [115] Indium tris-complexes of unsymmetrically substituted alkylmethyldichalcogenocarbamates (In[Q 2 CN(Me)R] 3 ) have been used in experiments where Q = S with R = n-butyl or n-hexyl, [117] and Q = Se with R = n-hexyl. [116] As for the zinc and cadmium bis-complexes of the same ligands, [66,78] these compounds are air-stable.…”

Section: From Dithiocarbamatesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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“…It is an important material for photovoltaic applications [1,2] . It can be used as an effective replacement for cadmium sulfide (CdS) in Cu(In, Ga)Se 2 based solar cells.…”

Section: Introductionmentioning

confidence: 99%

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

2017

IJSR

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: In 2 S 3 thin films were prepared using chemical spray pyrolysis technique. All films were deposited on FTO (Fluorine Doped Tin Oxide) coated glass substrate with different temperatures .The films obtained were characterised by X-ray diffraction (XRD), scanning electronmicroscopy (SEM,) optical transmission spectra, energy dispersive spectroscopy (EDS) and Atomic force microscopy (AFM). XRD studies have revealed that the samples are β-In 2 S 3 . All the films grown exhibited transparency over 55% in the visible spectral region. According to SEM, the surface morphologies of the films were free of defects. The AFM micrograph show that the films adhered to the FTO substrate with a small grain size.The optical band gap energy varied from 2.73 eV to 2.90 eV.

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Novel precursors for the growth of α-In2S3: trisdialkyldithiocarbamates of indium

Cited by 107 publications

References 14 publications

Deposition of Ni and Pd Sulfide Thin Films via Aerosol‐Assisted CVD

Deposition of Ni and Pd Sulfide Thin Films via Aerosol‐Assisted CVD

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

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