Novel Oxynitride Layer Applied to Flash Memory using HfO2 as Charge Trapping Layer

Statistical characterization and reliability modeling of novel high-K gate dielectric stacks

“…The need for an in-depth high-κ reliability study is also spurred by the use of these transition metal oxides (TMO) such as HfO 2 and ZrO 2 in current and future non-volatile memory (NVM) devices such as flash memory [45] and resistive random access memory (RRAM) [46]. Given that the metal-insulator-semiconductor (MIS) stack for logic devices is similar to the metalinsulator-metal (MIM) stack in RRAM except for the substitution of the silicon substrate by a metal electrode and the SIS/MIS stack is used for flash memory architecture, the insight into kinetics of degradation and physics of failure in logic transistors will in turn help understand phenomenon (mechanism) of charge trapping in Flash memory [47] and resistive switching in RRAM during the forming / SET stage [48] which corresponds to a transition from the high to low resistance state (HRS → LRS) in the memory device upon application of sufficiently high voltage.…”