Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

Sohn, Jung Inn; Choi, Su Seok; Morris, Stephen M.; Bendall, James S.; Coles, H. J.; Hong, Woong-Ki; Jo, Gunho; Lee, Takhee; Welland, Mark E.

doi:10.1021/nl1013713

Cited by 99 publications

(80 citation statements)

References 31 publications

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“…One example is semiconductor materials, which are largely employed to develop electronic, optical devices, piezoelectric and memory devices. [1][2][3][4][5][6][7][8][9][10][11][12] Actually, such devices are constructed using perovskite materials that have wide band gap allied to electronic, optical, piezo-, pyro-, ferroelectric and ferromagnetic properties. [13][14][15][16][17][18] However, the application of these materials is difficult and significantly delayed due to hard adjustment between the semiconductor structure lattice parameters and the substrate, mainly on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Lacerda¹,

Lázaro²

2016

Química Nova

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publicado na web em 18/02/2015ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Badoping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (E g ) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

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Section: Introductionmentioning

confidence: 99%

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Lacerda¹,

Lázaro²

2016

Química Nova

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“…It is worth noting that the 2-terminal structure of our device may ensure a relative simple device fabrication and integration processes compared to the 3-terminal devices such as CNT or ZnO NW FET memories. [ 5,6 ] Also, the device performance in this work is considerably higher than other 2-terminal memories. [ 3,17,30 ] In particular, no forming process is needed for the q-MIS memories, in contrast to the conventional RS devices.…”

Section: Device Performancementioning

confidence: 86%

“…[ 29 ] On the other hand, although many efforts have been devoted to fabricating those nonvolatile memories based on 1D semiconductor nanostructures, little attention has been paid to accurately determine their programming speed. Even in a few reports concerning the programming speed, such as ZnO FET memory, [ 6 ] the programming speed is still too slow (∼1 s) to meet the requirement for practical applications. In this work, we further evaluate the programming speed of the q-MIS memory.…”

Section: Device Performancementioning

confidence: 99%

“…The operation of these devices typically relies on modulating and retaining the trapped charges by controlling the applied bias voltage associated with a third electrode. The interfacial water molecules, [ 8 ] metal nanocrystals, [ 6 ] ferroelectric fi lm, [ 9,10 ] and high-k dielectric [ 5 ] have been used as the charge storage media in these FET memories. Such threeterminal devices, however, are suffering from their large size, limiting their use for further device integration.…”

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confidence: 99%

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Interfacially Engineered High‐Speed Nonvolatile Memories Employing p‐Type Nanoribbons

Lan

Jiang

et al. 2014

Adv Materials Inter

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and ZnO NWs [ 6,7 ] etc. have been intensively studied. The operation of these devices typically relies on modulating and retaining the trapped charges by controlling the applied bias voltage associated with a third electrode. The interfacial water molecules, [ 8 ] metal nanocrystals, [ 6 ] ferroelectric fi lm, [ 9,10 ] and high-k dielectric [ 5 ] have been used as the charge storage media in these FET memories. Such threeterminal devices, however, are suffering from their large size, limiting their use for further device integration. At the same time, the lack of control over the threshold voltage shift also results in poor reproducibility of the FET memories. In addition, they usually require high programming gate voltage and long write/erase time. All these drawbacks may seriously hinder their practical applications. Accordingly, two-terminal electrical switches such as resistive switching (RS) featuring simple device architecture have advanced rapidly in recent years. [ 11,12 ] The integration density of the memories and logic circuits could be remarkably improved by using the two-terminal switches, endowing RS based random access memory a promising alternative to the current fl ash memory for nonvolatile memories. Typically, the RS memories have a device structure similar to metalinsulator-metal (MIM), in which an insulator layer is sandwiched between two conductive electrodes. They can be electrically stimulated out of the high-resistance state after an initial electroforming cycle, and different switching behaviors, including bipolar, unipolar, and threshold switching, have been investigated in various binary transition metal oxides such as NiO, [13][14][15] [ 18 ] and perovskite oxides. [ 19,20 ] In spite of those unique advantages of RS memories, the underlying physical mechanism is not clear and still subjects to heated debate and controversy. In view of the widely-accepted fi lament model so far, [ 18,21 ] the formation and breakdown of the oxygen vacancy (V o ) chain conductive fi lament under electric fi eld is suggested to be responsible for the memory effect. [ 22 ] Nevertheless, the detailed generation and vanishing processes of the fi lament are complicated and hard to control, and a large voltage bias is generally required to initialize the memory for function. All these factors would compromise device stability and reproducibility.A novel two-terminal high-speed nonvolatile memory device is demonstrated featuring the construction of a quasi-metal-insulator-semiconductor (q-MIS) architecture. The quasi-MIS memory takes advantage of an in situ formed amorphous AlO x interfacial layer sandwiched between p-type ZnS nanoribbons (p-ZnSNRs) and a Al electrode. Systematical optimization of the AlO x interfacial layer enables the resultant memory to show excellent memory characteristics, including a fast programming speed of <100 ns, a high current ON/OFF ratio of ∼10 8 , a long retention time of 6 × 10 4 s, and good stability over 12 months. In addition, an interface-state-induced mechanism is proposed...

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“…One important and promising application of these technologies is the realization of multi-bit random access memory [11][12][13][14][15][16][17]. Inspired by the success of multi-bit flash memory, that proved to be highly efficient in high memory density, there have been several recent attempts to fabricate such multi-bit cells with memristors [18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

A Memristor as Multi-Bit Memory: Feasibility Analysis

Bass¹,

Fish²,

Naveh³

2015

RADIOENGINEERING

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Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

Cited by 99 publications

References 31 publications

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Interfacially Engineered High‐Speed Nonvolatile Memories Employing p‐Type Nanoribbons

A Memristor as Multi-Bit Memory: Feasibility Analysis

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