Novel multi-layer wiring build-up using Electrochemical Pattern Replication (ECPR)

Fredenberg, Mikael; Möller, Patrik; Topper, Michael J.

doi:10.1109/ectc.2009.5074072

Cited by 1 publication

(1 citation statement)

References 17 publications

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“…Due to the high CTE of the dielectrics and weak grain boundaries In this study, the dielectric around the Cu-Cu bumps is mainly composed of UF. It can be replaced by PI, BCB, or other polymer dielectrics [45][46][47][48]. The CTE of these dielectrics is larger than that of Cu.…”

Section: Discussionmentioning

confidence: 99%

Failure Mechanisms of Cu–Cu Bumps under Thermal Cycling

Shie

Hsu

et al. 2021

Materials

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The failure mechanisms of Cu–Cu bumps under thermal cycling test (TCT) were investigated. The resistance change of Cu–Cu bumps in chip corners was less than 20% after 1000 thermal cycles. Many cracks were found at the center of the bonding interface, assumed to be a result of weak grain boundaries. Finite element analysis (FEA) was performed to simulate the stress distribution under thermal cycling. The results show that the maximum stress was located close to the Cu redistribution lines (RDLs). With the TiW adhesion layer between the Cu–Cu bumps and RDLs, the bonding strength was strong enough to sustain the thermal stress. Additionally, the middle of the Cu–Cu bumps was subjected to tension. Some triple junctions with zig-zag grain boundaries after TCT were observed. From the pre-existing tiny voids at the bonding interface, cracks might initiate and propagate along the weak bonding interface. In order to avoid such failures, a postannealing bonding process was adopted to completely eliminate the bonding interface of Cu–Cu bumps. This study delivers a deep understanding of the thermal cycling reliability of Cu–Cu hybrid joints.

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Section: Discussionmentioning

confidence: 99%