2000 30th European Microwave Conference 2000
DOI: 10.1109/euma.2000.338651
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Novel Microwave Negative Capacitance. Application to a Wide-Range Tunable Capacitance

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Cited by 6 publications
(3 citation statements)
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“…Since the best location is near the ground plane, a grounded NIC topology will be easy to implement. In this sense, a grounded NII topology, first proposed by Kolev [10] has been selected. The circuit consists of two BF998 MOSFETs connected in the way shown in Fig.…”
Section: Design Examplementioning
confidence: 99%
See 1 more Smart Citation
“…Since the best location is near the ground plane, a grounded NIC topology will be easy to implement. In this sense, a grounded NII topology, first proposed by Kolev [10] has been selected. The circuit consists of two BF998 MOSFETs connected in the way shown in Fig.…”
Section: Design Examplementioning
confidence: 99%
“…These components do not obey the Foster theorem [7] and can compensate the reactance of the antenna by implementing a decrease of its reactance with the frequency allowing to match the antenna along broader bandwidths [8]. These non-Foster F. Albarracín-Vargas, F.J. Herraíz-Martinez and D. Segovia-Vargas are with the Department of Signal Theory and Communications, Carlos III University of Madrid (UC3M), 29811 Leganés, Madrid, Spain (e-mail: falbarracin@tsc.uc3m.es, dani@tsc.uc3m.es).. V. Gonzalez-Posadas is with elements, namely negative capacitors, and inductors, are realized by using 2-port active circuits so-called Negative Impedance Convertors (NICs) [9] or Negative Impedance Inverters (NIIs) [10]. A NIC is a 2-port active circuit, in which one port presents a negated (and possibly inverted) version of the impedance loading the other port.…”
Section: Introductionmentioning
confidence: 99%
“…The CMOS NIC principles introduced in [3] are applied in microwave frequencies up to 2 GHz using GaAS MMIC technology to produce negative resistance to compensate resonator losses of microwave resonator filters [6]. Negative capacitance realisation with 0,25 μm pHEMT process technology is first proposed by Kolev et al [7]. Negative inductance circuit which is separated from bias network using BiCMOS process is introduced in [8].…”
Section: Introductionmentioning
confidence: 99%