Novel method for measuring and analyzing surface roughness on semiconductor laser etched facets

Abstract

Articles you may be interested inA scatterometer for measuring the bidirectional reflectance and transmittance of semiconductor wafers with rough surfaces Rev. Sci. Instrum. 74, 4885 (2003);We introduce a method of measuring the surface profile of etched facets on semiconductor lasers, giving direct, quantitative results. Unlike previous techniques which attempt to infer facet quality from electro-optic performance or subjective analysis of micrographs, this technique provides the actual facet profile. We show how this information can be used for process improvement, and accurate numerical simulation of facet reflectivity.

Three-dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion beam etching

“…3-5 Also, the quantitative evaluation of etched sidewalls of various materials, for example, SiO 2 , AlGaAs/ GaAs, photoresist, etc., has been reported by a scanning probe microscope ͑SPM͒. [10][11][12][13][14][15] However, the analysis of InP sidewalls processed by RIBE has not been reported. In this letter, the sidewall roughness measurement of InP using an electron probe surface roughness analyzer is performed.…”