Organic-inorganic halide perovskite photovoltaics have achieved ever-increasing power conversion efficiencies (PCEs, >25%) in the past few years, which gains enormous research attention. [1][2][3][4][5][6][7][8][9][10] Perovskite materials, as the top-star photovoltaics candidate, possess the remarkable optoelectronic properties, such as strong absorption coefficient, equally long electron/hole diffusion lengths, low deep trap density, high charge mobility, and low exciton dissociation energy. [11][12][13][14][15][16] Under the in-depth researching of thin-film preparation engineering, interface engineering, and surface passivation engineering, perovskite devices have promoted rapid efficiency development. [7,[17][18][19][20][21][22][23][24][25][26] Perovskite materials is intrinsic ionic compound with "soft material" nature, many defects such as vacancies, dangling bond, and free ions, produce during film formation from solution, the defects mainly focused on the interface. [27,28] The ionic component induce charged shallow-level traps with low formation energies (e.g., Pb or I interval, I-Pb antisite, I or MA vacancies), which is be unfavorable for device performance. The defects are the nonradiative recombination centers, which cause the quenching of carriers and reduce the performance output. [29][30][31] In addition, defects also cause ion migration, phase segregation, and hysteresis. [32] In planar structure device, interface is critical to charge transport and extraction. [27,[33][34][35][36][37][38] Both the perovskite bottom and