Novel low-temperature processing of low noise SDDs with on-detector electronics

Šonský, J.; Koornneef, R.N.; Huizenga, J.; Hollander, R.W.; Nanver, LK; Scholtes, T.L.M.; Roozeboom, F.; Eijk, C.W.E. van

doi:10.1016/j.nima.2003.09.040

Cited by 7 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Increase in total capacitance at the input of the spectrometer system increases the 1/f noise and also the series white noise. Decrease in the transconductance increases the series noise and hence degrades the energy resolution at lower pulse shaping time constants [35,36]. By measuring the energy resolution for various shaping times, before and after irradiation, one can estimate the noise contribution of leakage current, JFET and the total input capacitance on the spectrometer system resolution.…”

Section: Jinst 10 P09005mentioning

confidence: 99%

Radiation effects on Silicon Drift Detector based X-ray spectrometer on-board Chandrayaan-2 mission

Shanmugam¹,

Acharya²,

Vadawale³

et al. 2015

J. Inst.

View full text Add to dashboard Cite

The space radiation damage effects on the Silicon Drift Detector (SDD) has been studied by measuring the leakage current and the energy resolution for various gamma ( 60 Co) and X-ray ( 55 Fe) doses. It is observed that there is no significant change in the leakage current and the energy resolution for the gamma ray dose up to 3 krad. The energy resolution is degraded from ∼160 eV to ∼210 eV at 5.89 keV for the gamma ray dose of ∼10 krad for the detector operating temperature of ∼-40 o C. This meets the requirement of Chandrayaan-2 payload performance for the mission life of 2 years. Irradiation tests were also carried out using 55 Fe X-ray source for the doses up to 64 krad and it is observed that there is no significant change in the leakage current and the energy resolution. The radiation damage to the electronic components such as internal JFET (specifically transconductance-g m ) and the change in the total input capacitance are quantified by measuring the energy resolution for various pulse shaping time constants, before and after irradiation. In this paper, we present a summary of the irradiation measurements and their effects on the SDD devices.

show abstract

Section: Jinst 10 P09005mentioning

confidence: 99%