Novel liquid cobalt precursor for metal atomic layer deposition

Abstract

A novel liquid cobalt (Co) precursor, Bis (diisopropylbutanamidinate)cobalt (DIPRoBA-Co), is proposed for Co metal atomic layer deposition (ALD). This precursor was synthesized and the cobalt ALD was examined with the obtained precursor. This precursor is liquid at a room temperature and has an efficient vapor pressure at 90 °C for ALD process. Co metal film with excellent step coverage characteristics even for 6 nm thin one on the silicon dioxide is obtained by ALD using the ammonia, hydrogen and the DIPRoBA-Co gas system at 220 °C substrate temperature.