Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor

Luo, Shaoheng; Chen, Baixin; Li, Ké; Zhuo, Cheng; Shi, Yiyu

doi:10.1109/edaps.2017.8277019

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The Tsv Array Capacitor and Planar Spiral Inductor1

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2019

2024

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Cited by 2 publications

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“…The possibility of making TSV-based capacitor successful depends on the structure of TSV that has an inner copper encompassed by silicon dioxide. The function of silicon dioxide is to insulate the copper from the silicon substrate [15,16,17,18]. The topology structure of TSV arrays given in Fig.…”

Section: The Tsv Array Capacitor and Planar Spiral Inductormentioning

confidence: 99%

A high-pass filter based on through-silicon via (TSV)

Wang

Huang

2019

IEICE Electron. Express

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A fourth-order high-pass filter is proposed, which is formed by spiral inductors and TSV capacitors. The components of this filter rely on the TSV technology, which is generally regarded as vertical interconnection but now used to compose capacitor. The comparison of the results between finite element method and equivalent electric circuit obviously proves that they have nearly equal filtering characteristics including cutoff frequency and roll-drop rate. Moreover, the comparisons are made among the HPFs based on different technologies, and the challenges the proposed HPF faces are discussed.

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Section: The Tsv Array Capacitor and Planar Spiral Inductormentioning

confidence: 99%