Novel Integration of Ultra-thin Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

Zhang, L.; Li, H.Y.; Shang, Yang; Yoo, Woo-Sik; Yu, H.; Tan, Can

doi:10.7567/ssdm.2015.e-6-4

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials 2015

DOI: 10.7567/ssdm.2015.e-6-4

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Novel Integration of Ultra-thin Al<sub>2</sub>O<sub>3</sub> with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

L. Zhang¹,

H.Y. Li²,

Yang Shang³

et al.

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Novel Integration of Ultra-thin Al<sub>2</sub>O<sub>3</sub> with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

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