Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials

Zhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bin; Sun, Huajun; Jiang, Hui; Kong, Ling‐Bin; Qu, Shengchun; Wang, Zhijie

doi:10.1016/j.pquantelec.2020.100313

Cited by 16 publications

(6 citation statements)

References 69 publications

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“…This is due to lower threshold current densities (Dikshit and Pikal 2004), lower temperature sensitivity (Arakawa and Sakaki 1982), and greater tolerance to threading dislocation defects incurred during epitaxy on silicon substrates (Zhang et al 2018). Additionally, III-V compound semiconductors offer high electron mobility and direct bandgaps at telecom wavelengths (Zhao et al 2021), with InAs/InGaAs QDs demonstrating high performance in lasers at 1.3 μm (Qiu et al 2001). These properties make III-V QDs attractive for use in silicon photonics, creating opportunities for mass producing low-cost PICs, provided remaining challenges can be overcome (Norman et al 2019).…”

Section: Introductionmentioning

confidence: 99%

Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices

Maglio,

Jarvis,

Tang

et al. 2024

Opt Quant Electron

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A modelling routine has been developed to quantify effects present in p-modulation doped 1.3 μm InAs/InGaAs quantum dot laser and modulator devices. Utilising experimentally verified parameters, calculated modal absorption is compared to measurements, prior to simulation of structures under reverse and forward bias. Observed broadening and a reduction of absorption in p-doped structures is attributed primarily to increased carrier scattering rates and can bring benefit when structures are configured as optical modulators with enhancements in the figure of merit. However, increased carrier scattering limits the maximum modal gain that can be achieved for lasers. The state filling caused by p-doping only marginally reduces absorption but assists laser operation with increased differential gain and gain magnitude at lower current densities.

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Section: Introductionmentioning

confidence: 99%

Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices

Maglio,

Jarvis,

Tang

et al. 2024

Opt Quant Electron

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“…Some 2D group III–IV binary compounds break the inversion symmetry of the crystal structure, thereby exhibiting piezoelectricity and demonstrating an in-plane piezoelectric coefficient (Figure a–c) . In addition, GaN and GaAs offer numerous advantages for optoelectronic device applications due to their high carrier mobility and long-term stability. − Chung et al successfully grew GaN films on graphene layers utilizing densely aligned ZnO nanowalls as an intermediary substrate (Figure d) . The initial step involved plasma oxygen treatment of the graphene, creating distinct stepped edges.…”

Section: Growth Of Other Noncentrosymmetric 2d Materialsmentioning

confidence: 99%

Growth of Noncentrosymmetric Two-Dimensional Single Crystals

Cui,

Qi,

Liang

et al. 2024

Precision Chemistry

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Among the various two-dimensional (2D) materials, more than 99% of them are noncentrosymmetric. However, since the commonly used substrates are generally centrosymmetric, antiparallel islands are usually inevitable in the growth of noncentrosymmetric 2D materials because of the energetic equivalency of these two kinds of antiparallel islands on centrosymmetric substrates. Therefore, achieving the growth of noncentrosymmetric 2D single crystals has long been a great challenge compared with the centrosymmetric ones like graphene. In this review, we presented the remarkable efforts and progress in the past decade, through precise chemical processes. We first discussed the great challenge and possible strategies in the growth of noncentrosymmetric 2D single crystals. Then, we focused on the advancements made in producing representative noncentrosymmetric 2D single crystals, including hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and other noncentrosymmetric 2D materials. At last, we summarized and looked forward to future research on the growth of layer-, stacking-, and twist-controlled noncentrosymmetric 2D single crystals and their heterostructures.

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“…95 Likewise, in 2002, they reported the high sensitivity of group III nitride-based gas sensors to nitrogen dioxide (NO 2 ) and the potential use of GaN Schottky diode-based sensors. 3–40 Chung et al 87 demonstrated AlGaN/GaN high-electron mobility transistor (HEMT) sensors for hydrogen gas detection at high temperatures and under exposure to irradiation. This gas sensor was fabricated on AlGaN/GaN with Si as the substrate using platinum (Pt) as the gate electrode material for hydrogen detection in the gate area.…”

Section: Metal and Semiconductor Group III Nitride-based Gas Sensorsmentioning

confidence: 99%