Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device

Abstract

Articles you may be interested inResponse to ''Comment on 'Optical bistability in selfelectrooptic effect devices with asymmetric quantum wells' and on 'Novel configuration of selfelectrooptic effect device based on asymmetric quantum wells''' [Appl.Response to ''Comment on 'Optical bistability in selfelectrooptic effect devices with asymmetric quantum wells' and on 'Novel configuration of selfelectrooptic effect device based on asymmetric quantum wells''' [Appl.Comment on ''Optical bistability in selfelectrooptic effect devices with asymmetric quantum wells'' and on ''Novel configuration of selfelectrooptic effect device based on asymmetric quantum wells'' Optical bistability in selfelectrooptic effect devices with asymmetric quantum wells Appl.Integrated quantum well selfelectrooptic effect device: 2×2 array of optically bistable switches

All-optical switching using the quantum Zeno effect and two-photon absorption

“…[14]. Examples include MachZehnder interferometers with a nonlinear phase shift produced by a Kerr nonlinearity [14], ring resonators [15] whose frequency can be shifted [16,17], and free carrier generation in quantum wells [18]. Most of these devices operate with control powers in excess of 10 mW [14].…”

Effect of a noisy driving field on a bistable polariton system

“…Optical bistability was proposed by [1][2][3] and since then observed in many different systems such as cavity lasers [4][5][6][7], atomic systems [7,8], semiconductors [9][10][11], and microcavity polaritons [12,13]. Bistability is commonly used for device applications [3,[14][15][16], particularly in polariton systems as spin switch and optical memory [17,18], optical transistor [19], laser [20], and logic functions [21]. The fidelity of the devices depends on the stability of the system.…”

Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

“…From this self-photo-induced refractive index modulation, an optical nonlinearity can be defined, and simple estimations show that for a biased-pin-diode configuration, the figure of merit of the nonlinearity is more than one order of magnitude larger than band edge resonance effects in 111-V semiconductor materials. The mechanism is similar to that in a self electrooptic effect device [9], which is based on a nonlinear modulation of the absorption coefficient rather than a modulation of the refractive index. There is no feedback as in the SEED, however.…”

“…and J z J ( h w ) is the two dimensional density of states, which for parabolic bands is giving by (9) where B[hw -E, -Ej] is the unity step function. To take account of broadening due to phonons, impurity scattering, electric field inhomogeneities, etc., the delta function in (6) and the unity step function in (9) can readily be folded by Gaussian or Lorentzian functions.…”