Novel growth methods of optoelectronic crystals based on antimonides

Bulk Growth of InSb and Related Ternary Alloys

“…In 1995 Venkrbec et al [52] achieved excellent homogeneity of ±0.2 % for x ∼ 0.95 but on very polycrystalline ingots. In 1996 Redden [53] achieved single-crystal growth at ∼ 90 % GaSb on GaSb seeds with a somewhat greater composition spread.…”