Novel green synthesis and improved solar-blind detection performance of hierarchical γ-Ga<sub>2</sub>O<sub>3</sub> nanospheres

Ruan, Mao Mao; Song, Le Xin; Yang, Zun; Wang, Qing Shan; Wang, Ya Qian

doi:10.1039/c7tc02615c

Cited by 26 publications

(16 citation statements)

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“…Ga 2 O 3 , an important semiconductor oxide, which was first reported in the 1950s, has recently emerged as a promising candidate for a range of power electronic devices with capabilities beyond existing technologies . Considering the difference in atomic arrangement, there are seven commonly identified polymorphs (i.e., different forms or crystal structures) of Ga 2 O 3 , which are usually referred to as amorphous, polycrystalline, corundum (α), monoclinic (β), defective spinel (γ), orthorhombic (ε), and orthorhombic (δ) phases . Among these phases, the monoclinic β‐gallia (β‐Ga 2 O 3 ) is the most stable crystal structure under normal conditions, and thus has been extensively explored.…”

Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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“…Similarly, high quality nanospheres of γ‐Ga 2 O 3 with a high specific surface area were synthesized and employed in making a device with PDCR of 2.29 × 10 3 by Ruan et al. [ 107 ] δ‐Ga 2 O 3 is another phase with body‐centered cubic structure which has been studied but found to be unstable and greater efforts are required for its advancement. A transient κ‐Ga 2 O 3 has also been reported by Playford et al.…”

Section: The Functional Material—gallium Oxide: Properties For Photodetection Applicationsmentioning

confidence: 99%

“…Kan et al [106] have fabricated a deep-UV p-i-n type photodetector using p-graphene/γ-Ga 2 O 3 nanodots/n-SiC with a self-powered photoresponsivity of 5.8 mA W −1 . Similarly, high quality nanospheres of γ-Ga 2 O 3 with a high specific surface area were synthesized and employed in making a device with PDCR of 2.29 × 10 3 by Ruan et al [107] δ-Ga 2 O 3 is another phase with bodycentered cubic structure which has been studied but found to be unstable and greater efforts are required for its advancement. A transient κ-Ga 2 O 3 has also been reported by Playford et al which is analogous to orthorhombic κ-Al 2 O 3 .…”

Section: The Functional Material-gallium Oxide: Properties For Photodetection Applicationsmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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“…17 In addition, γ-Ga 2 O 3 nanomaterials have been studied in the field of DUV detection. 18,19 Therefore, we believe that solution-processible γ-Ga 2 O 3 NDs have potential in high-performance DUV detectors. The oxide film can easily form oxygen vacancies during preparation and annealing, which results in a slow response speed in the photoconductive photodetector.…”

Section: ■ Introductionmentioning

confidence: 99%

Ultrawide Band Gap Oxide Nanodots (E_g > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

Kan

Zheng

et al. 2020

ACS Appl. Mater. Interfaces

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Recently, deep ultraviolet (DUV) detectors based on gallium oxide (Ga2O3) have become promising in industrial and aerospace applications because of their inherently ultrawide band gaps (4.5–4.9 eV). Because most of them are difficult to be prepared, the lattice mismatch with the substrate and the expensive cost have to be taken into consideration. Because of such problems, the solution-processible nanodots (NDs) with ultrasmall size provide a solution. Here, we propose to use γ-Ga2O3 NDs as the DUV-sensitive layer to construct a DUV p–i–n-type detector with photovoltaic properties (p-graphene/γ-Ga2O3 NDs/n-SiC). The device exhibits a high photoresponsivity (5.8 mA/W) and detectivity (7.6 × 1010 jones) with a 250 nm source illumination under 0 V bias. Moreover, the DUV/UV injection ratio (R 250/R 360) reaches 103. These results demonstrate a new way to manufacture low-cost, high-performance DUV detectors based on γ-Ga2O3.

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Novel green synthesis and improved solar-blind detection performance of hierarchical γ-Ga₂O₃ nanospheres

Abstract: High-quality γ-Ga2O3 nanospheres (diameter, 130 nm) were successfully synthesized by direct conversion of a precursor complex of Ga3+ ions and tartrate ions (L2−) in water.

Cited by 26 publications

References 50 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Ultrawide Band Gap Oxide Nanodots (E_g > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

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Novel green synthesis and improved solar-blind detection performance of hierarchical γ-Ga2O3 nanospheres

Abstract: High-quality γ-Ga2O3 nanospheres (diameter, 130 nm) were successfully synthesized by direct conversion of a precursor complex of Ga3+ ions and tartrate ions (L2−) in water.

Cited by 26 publications

References 50 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Ultrawide Band Gap Oxide Nanodots (Eg > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

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Novel green synthesis and improved solar-blind detection performance of hierarchical γ-Ga₂O₃ nanospheres

Ultrawide Band Gap Oxide Nanodots (E_g > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector