Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Matulionis, A.; Liberis, J.; Matulionienė, I.; Šermukšnis, E.; Leach, J. H.; Wu, M.; Morkoç̌, H.

doi:10.1002/pssa.201026361

Cited by 18 publications

(25 citation statements)

References 20 publications

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“…Also, as expected, the resonance 2DEG density increases with the applied electric field [10,14] because the plasma frequency decreases when the bulk density of the electron gas decreases under heating.…”

Section: ×10supporting

confidence: 74%

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

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Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×10 7 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm -2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of V GS = -1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

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Section: ×10supporting

confidence: 74%

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

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“…As a result, the resonance 2DEG density n res increases with the hot--electron temperature (Fig. 2, circles) [12].…”

Section: Power-tuned Resonancementioning

confidence: 92%

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

et al. 2011

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Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous -the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.

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“…The experimental results of Fig. 9 can be approximated with a simple resonance curve [12,38,39]: (9) where n res is the fitting parameter-the resonance 2DEG density for the fastest decay of hot phonons. The resonance curve (solid) fits the experimental data on bulk GaN as well (open circles).…”

Section: Figurementioning

confidence: 99%

“…Since the plasma frequency depends on the hot-electron temperature, this, in turn, changes the position of the plasmon-LO-phonon resonance on the 2DEG density scale [6]. When the 2DEG density is increased at a slope of 2.7x10 9 cm -2 K -1 [39] (Fig. 12, green line and open circles), the calculated peak value remains independent of the electron temperature.…”

Section: Power-tuned Resonance Decay Of Hot Phononsmentioning

confidence: 99%

“…12, green line and open circles), the calculated peak value remains independent of the electron temperature. Figure 12 Dependence on hot-electron temperature of the resonance 2DEG density (stars), and the 2DEG density required to keep the peak electron density unchanged under thermal expansion of 2DEG gas (circles ) [39].…”

Section: Power-tuned Resonance Decay Of Hot Phononsmentioning

confidence: 99%

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Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs

Matulionis¹

2010

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information , 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) 15 REPORT DATE (DD-MM-YYYY) 19-07-2010 REPORT TYPE Interim Report DATES COVERED PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)Semiconductor Physics Institute A. Gostauto 11 Vilnius, Lithuania 2600 PERFORMING ORGANIZATION REPORT NUMBERN/A SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)EOARD Unit 4515 BOX 14 APO AE 09421 SPONSOR/MONITOR'S ACRONYM(S)AFRL/AFOSR/RSW (EOARD) SPONSOR/MONITOR'S REPORT NUMBER(S)AFRL-AFOSR-UK-TR-2011-0013 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTES ABSTRACTA novel fluctuation-based approach is applied to consider the unsolved problems in the realm of nitride heterostructure field effect transistors (HFETs). Fluctuations originate at a microscopic level and provide information on the processes responsible for device operation and degradation. The novel fluctuation-based approach is impelled by recent demonstration of strong correlation of microwave hot-electron fluctuations with frequency performance and degradation of nitride HFETs. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than conventional heat accumulated by acoustic phonons. The heat accumulation depends on the supplied electric power and the rate of heat dissipation. We treat the problem in terms of the hot-phonon lifetime responsible for conversion of non-migrant optical phonons into migrant modes. The lifetime is measured over wide ranges of electron densities and supplied electric power. The optimal conditions for heat dissipation are determined and associated with plasmon-assisted disintegration of LO phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, and device reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs is demonst...

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Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Abstract: online colour at: www.pss-a.com) Drain current degradation (stars [8]) correlates with hot-phonon lifetime (curve).

Cited by 18 publications

References 20 publications

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

Limitation of Hot-Carrier Generated Heat Dissipation on the Frequency of Operation and Reliability of Novel Nitride-Based High-Speed HFETs

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