Novel Erasable and Rewritable Optical Memory Utilizing Photostimulated Luminescence in Eu and Sm Codoped SrS Phosphor Ceramics

Abstract

Photostimulated luminescence (PSL) in Eu and Sm codoped strontium sulfide (SrS:Eu, Sm) phosphor ceramics is studied in order to develop a novel erasable and rewritable optical memory utilizing the PSL. Intense PSL with a peak at about 600 nm is observed in SrS:Eu, Sm phosphor ceramics which are stimulated with infrared light after irradiation with ultraviolet (UV) light or visible light. The excitation and emission mechanisms of the 600 nm PSL are discussed. The PSL characteristics for the optical memory are reported.

Nanoscale Cubic Growth Of SrS Codoped With Eu And Sm On MgO (001) For Optical Memory Materials

“…Details of the growth can be found in Ref. Our XRD results [4] indicates that the film consists only of a single phase and is epitaxial with a in-plane cube-on-cube orientation, SrS codoped with Eu and Sm have been considered to be good candidates for electron trapping optical memory materials, which exhibit infraredstimulated luminescence (ISL) by optical stimulation with infrared light after visible or UV-light irradiation at room temperature (RT) [5,6]. Our previous report on the RHEED pattern [4] shows the island growth-mode of SrS film 1 Electronic mail: eleteokl@nus.edu.sg with a spot-like diffraction pattern is preserved throughout the entire growth.…”

Preparation of SrS:Eu, Sm and its photostimulated luminescence

“…This process is called information output. On account of that Eu acts as not only luminescence center but also hole captor [6,7], the electrons trapped by the auxiliary activators are re-excited to the conduction band and recombine with the dominant activators . When the electrons combine with the activators, surplus energy is released as visible light.…”

Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr0.95S on (001)MgO substrate using α-MnS buffer layer

“…SrS and CaS codoped with Eu and Sm (abbreviated as SrS:Eu, Sm and CaS:Eu, Sm) have been considered to be good candidates for electron trapping optical memory materials, which exhibit ISL by optical stimulation with infrared light after visible or UVlight irradiation at room temperature (RT) [16][17][18][19][20]. In the SrS:Eu, Sm or CaS:Eu, Sm system, Eu is the activator and Sm is the trap.…”