Novel electronic properties in silicene on MoSe2 monolayer: An excellent prediction for FET

Quasi-Free-Standing Features of Stanene/Stanane on InSe and GaTe Nanosheets: A Computational Study

“…Previous studies have shown that on the transition metal dichalcogenide substrates, the electronic structure of supported silicene sheet can be altered by the layer number of substrates. ,, Here, for the Sn/SnI–InSe/GaTe heterosheets, additional calculations are also performed on the bilayer (2 ML) substrates. As shown in Figures S9 and S10 of the Supporting Information, Sn-2 ML InSe, Sn-2 ML GaTe, and SnI-2 ML InSe systems have electronic properties similar to those on the monolayer substrates, whereas for the SnI-2 ML GaTe heterosheet, a layer-dependent behavior is observed, which originates from the change of top valence bands from the GaTe bilayer.…”

Optical properties enhancement via WSSe/silicene solar cell junctions

“…35 This discovery has opened new avenues, leading to the proposal of various silicene/semiconductor interfaces as potential 2D platforms for optoelectronic nanodevices. 36–38 Among these, Kharadi et al 39,40 propose a silicene/MoS 2 heterojunction, which has shown improved performance in MoS 2 -based photodetectors. The enhancement observed can be attributed to the high carrier mobility in silicene, which reduces the transit time of the photodetectors.…”

Silicene/ZnI2 van der Waals heterostructure: tunable structural and electronic properties

“…Also modulation of their properties can be accomplished by sliding the layers [16], enforcing strain [17], applying electric field [18][19][20], varying interlayer distance [21,22]. The unique characteristics of HBLs are expected to offer a wide variety of promising applications including, nanoelectronics [23,24], optoelectronics [10,25], photovoltaics [12,26], spintronics [27], valleytronics [28], thermoelectronics [29], piezoelectric sensors and nanogenerators [30] etc. for instance.…”