Novel electrodes and gate dielectrics for field‐effect transistors based on two‐dimensional materials

Abstract

materials are atomically thin materials that show quantum confinement effect. They have been studied as promising materials for field-effect transistors (FETs). The fabrication of an FET mainly concerns how to deposit metal electrodes and dielectrics onto the 2D material channel. And conventional fabrication processes are not optimized for novel applications of 2D FETs. This review aims to introduce recent studies regarding novel electrodes and dielectrics for 2D FETs. The devices made by these approaches show comparable performance to conventional FETs. And they feature new applications and easy fabrication. This review covers the topics in two sections: evaporation-free electrodes and nonoxide dielectrics. The former covers electrodes prepared without direct deposition of metals using evaporators or sputters. The latter encompasses alternatives to oxide dielectrics. These topics would be beneficial to realize the intrinsic properties of 2D materials and to assist fundamental research with prototyping FETs on a tabletop.

Emerging nonoxide dielectrics for next‐generation electronics

“…2D dielectric materials are insulating materials composed of only one or a few atomic‐thick layers. Maintaining the dielectric properties at such a very low thickness is difficult 95 . For instance, as the thickness of SiO 2 decreases, its breakdown strength decreases, and insulation is lost when it reaches a thickness of 5 nm or less 26,96 .…”