2005
DOI: 10.1038/nmat1450
|View full text |Cite
|
Sign up to set email alerts
|

Novel electrical switching behaviour and logic in carbon nanotube Y-junctions

Abstract: Carbon-nanotube-based electronics offers significant potential as a nanoscale alternative to silicon-based devices for molecular electronics technologies. Here, we show evidence for a dramatic electrical switching behaviour in a Y-junction carbon-nanotube morphology. We observe an abrupt modulation of the current from an on- to an off-state, presumably mediated by defects and the topology of the junction. The mutual interaction of the electron currents in the three branches of the Y-junction is shown to be the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

4
162
1

Year Published

2006
2006
2014
2014

Publication Types

Select...
5
3

Relationship

1
7

Authors

Journals

citations
Cited by 224 publications
(167 citation statements)
references
References 29 publications
4
162
1
Order By: Relevance
“…While operation up to 100 kHz is possible, the upper limit seems to be set by the nanotube capacitance related to the details of the Y-CNT structure. This switching is of a different form than the one observed in a previous experiment 15 where the simultaneous presence of an ac voltage on the source-drain channel and a dc voltage on the control/gate terminal resulted in an abrupt turn off, possibly due to defect mediated negative capacitance effects. 21 From the Y-CNT electrical characteristics it is seen that the mode of operation of the device is quite different from that of a conventional FET and more akin to a Schottkybarrier-type FET.…”
contrasting
confidence: 52%
See 2 more Smart Citations
“…While operation up to 100 kHz is possible, the upper limit seems to be set by the nanotube capacitance related to the details of the Y-CNT structure. This switching is of a different form than the one observed in a previous experiment 15 where the simultaneous presence of an ac voltage on the source-drain channel and a dc voltage on the control/gate terminal resulted in an abrupt turn off, possibly due to defect mediated negative capacitance effects. 21 From the Y-CNT electrical characteristics it is seen that the mode of operation of the device is quite different from that of a conventional FET and more akin to a Schottkybarrier-type FET.…”
contrasting
confidence: 52%
“…It is plausible that remarkable features of Y-junction based transistors such as the abrupt switching 15 and differential gain 19 observed in earlier studies could be related to the presence and location of defects. In situ engineering of CNT morphology, e.g., exposure to intense electron-beam radiation 13 could also be utilized to tailor individual Y-CNT characteristics.…”
mentioning
confidence: 90%
See 1 more Smart Citation
“…For example, electron 11,[19][20][21] and ion 11 irradiation as well as electrical current sources [23][24][25][26][27] have been used to modify the structure and morphology of nanocarbons. However, these rearrangement studies were carried out only for local changes of junctions in a few individual nanotubes [11][12][13][14][15][16][17][18][19][20][21]25 and by the destruction of carbon layers on electrical breakdown 23,26,27 . Furthermore, the reported reconstruction methods require high to extremely high temperature (750-2,200°C) conditions 20,22,28 , making them power-intensive, and incompatible with various scalable processes.…”
mentioning
confidence: 99%
“…quasi-ballistic [42]. CNTs, due to their electronic nature, can be used in transistors and other switching applications in advanced electronics [43]. The most recent application of nanotubes was as an emitter.…”
Section: Arc-discharge Methodsmentioning
confidence: 99%