Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V
 BD–R
 ON Tradeoff and RF PA Performance

Soni, Ankit; Ajay, Ajay; Shrivastava, Mayank

doi:10.1109/ted.2020.2976636

Cited by 51 publications

(20 citation statements)

References 29 publications

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“…It is generally known that the E-Field peak at the gate or drain edge is the significant cause of the device's avalanche breakdown. So the FP structure is employed both at the gate and drain electrodes [16], [17]. The original E-Field peaks at the gate and drain edge are mitigated and new E-Field peaks come into being at the edge of gate FP (G-FP) and drain FP (D-FP), leading to more uniform potential and E-Field distributions.…”

Section: Device Structure and Analytical Modelmentioning

confidence: 99%

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Liu

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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The breakdown voltage model of Si-substrated AlGaN/GaN HEMTs with gate and drain field plates is proposed in this work. The silicon substrate and GaN buffer are considered as the depletion region in the modeling process. The analytical model shows great simplicity and veracity. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMTs. The avalanche breakdown occurs at the field plate's edge in lateral structure or at the interface in vertical structure. According to the analytical model, the relationship between the lateral breakdown and the vertical breakdown is demonstrated in this work. The breakdown location is affected by the variation of the structure parameters, including gate-to-drain distance, buffer thickness and field plates' lengths. With the aid of the analytical model, effective guidance for device optimization to achieve high performance can be obtained. Index Terms-AlGaN/GaN HEMTs, gate and drain field plates, analytical model, breakdown voltage.

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Section: Device Structure and Analytical Modelmentioning

confidence: 99%

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Liu

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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“…In the fabrication process, the field plate is connected to the gate and placed over the passivation layer. However, the improvement of the device performance depends on the lateral length of the field plate, and the breakdown voltage rises at the beginning and then declines with increasing field plate [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. At the same time, the field plate is equivalent to increasing the electrode overlapping area, which brings the corresponding parasitic capacitance and deteriorates the switching performance of the device.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, a novel drain-connected field plate GaN HEMT (DC-HEMT) was proposed, which improved the breakdown and radio frequency power amplifier performance by taking advantage of a vertical-field plate [ 21 ]. However, the withstand voltage in the buffer region remains limited.…”

Section: Introductionmentioning

confidence: 99%

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Guo

et al. 2022

Micromachines

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In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces a high electric field from the vertical field plate into the internal buffer region of the device. The compound buffer layer can significantly increase the breakdown performance without sacrificing any dynamic characteristics and increasing the difficulty in the fabrication process. The significant structural parameters are optimized and analyzed. The simulation results reveal that the proposed HEMT with a 6 μm gate-drain distance shows an OFF-state breakdown voltage (BV) of 881 V and a specific ON-state resistance (Ron,sp) of 3.27 mΩ·cm2. When compared with the conventional field plate HEMT and drain connected field plate HEMT, the breakdown voltage could be increased by 148% and 94%, respectively.

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“…In light of that, the field plate technique is employed in GaN-based HEMT to curb the severe electric field crowding near gate and drain electrodes. As one of the classic junction terminal techniques, the field plates are efficient to transfer E-field peaks but can hardly create an even electric field distribution of the channel layer between the gate and drain [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

et al. 2021

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The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing extra dopants to the channel layer, the E–field distribution along the AlGaN/GaN heterojunction interface is reshaped, resulting in an improved breakdown characteristic. An optimized doping concentration gradient of channel layer of 2 × 1016 cm−3/step is proposed and verified by simulations. The breakdown voltage (BV) of the optimized SDC–HEMT reaches 1486 V with a 59.8% improvement compared with conventional AlGaN/GaN HEMT. In addition, the average E–field in the region between gate and drain improves from 1.5 to 2.5 MV/cm. Based on the equivalent potential method (EPM), an analytical model of the E–field and potential distribution is presented. The veracity and effectiveness of the proposed methodology is verified by the good agreement between the simulated and modeled results.

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Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V _BD–R _ON Tradeoff and RF PA Performance

Cited by 51 publications

References 29 publications

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

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Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD–R ON Tradeoff and RF PA Performance

Cited by 51 publications

References 29 publications

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

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Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V _BD–R _ON Tradeoff and RF PA Performance