Novel Double Acidic Texturing Process for Saw-Damage-Free Kerfless Multicrystalline Silicon Wafers

Jung, Yujin; Bae, Soohyun; Lee, Hae‐Seok; Kim, Dong Hwan; Kang, Yoonmook

doi:10.1109/jphotov.2020.3014858

Cited by 8 publications

(4 citation statements)

References 27 publications

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“…The etched surface and the time depend etching process plays an important role. [30,31] Since the previous studies on the mechanisms of silicon etching in HF-HNO 3 -based solutions were reported by Robbins and Schwartz in 1959-1961 [32][33][34] and by K. Kim in 1960, [22] it has been accepted recently that silicon etching in the HF:HNO 3 system is mainly governed by the following reactions…”

Section: Etching Mechanismmentioning

confidence: 99%

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

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This study proposes a method to enhance the efficiency and optical properties of silicon solar cells made from as‐cut boron‐doped p‐type multicrystalline silicon (mi‐Si) wafers through acid‐based chemical texturization. Achieving lower reflectance is crucial for improving solar cell efficiency, and this can be attained through optimized chemical etching. The research demonstrates achieving a reflectance below 2% on the wafer surface after optimal chemical etching. Wet chemical etching is employed as the surface treatment method, using the same chemical etchant with varying conditions for the texturing process. The study compares temperature‐maintained chemical etching and without temperature maintenance. The chemicals used include HF + HNO3 + CH3COOH at temperatures of 50 °C and room temperature, with etching durations of 2, 5, 10, and 15 minutes, respectively. The as‐cut boron‐doped p‐type mc‐Si wafer grains are analyzed using UV‐vis spectroscopy, optical microscopy, Fourier transform infrared spectroscopy, thickness profilometry, scanning electron microscopy, and X‐ray diffraction spectroscopy, both before and after etching. Among the different conditions tested, the chemical etchant HF + HNO3 + CH3COOH at 50 °C for a 5‐minute etching duration yields favorable results, with reflectivity below 2%. The orientation of mc‐silicon wafer grains is determined using X‐ray diffraction spectroscopy.

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Section: Etching Mechanismmentioning

confidence: 99%

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Madhesh,

Muthukumar,

Srinivasan

et al. 2023

Cryst. Res. Technol.

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“…Equation (2) was used to calculate the value of weighted average reflectance (R w ) using the reflectance measured via UV-Vis spectroscopy [16,17].…”

Section: Variation In Surface Reflectancementioning

confidence: 99%

Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers

et al. 2020

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The etching of Si wafers significantly influences the efficiency of photovoltaic devices. Texturing can effectively decrease front surface reflection and improve device performance. Saw damage removal (SDR) is necessary to yields uniform random pyramidal surfaces without the appearance of saw marks, it entails significant consumption of chemical solutions and complicated cleaning steps. Herein, an alternative process of pre-texturing thermal treatment was carried out at 800 °C for 10 min, followed by anisotropic texturing, and a uniform pyramidal surface over a large area of the textured surface was obtained without saw marks. Compared with that of as-cut mono-Si wafers (30.7%), the weighted average reflectance of the samples textured with or without thermal treatment decreased to 11.2% and 11.9%, respectively, and further to 3% and 3.4%, respectively, when anti-reflection coatings were applied. In addition, saw marks on the wafer surface were used as gettering sites during thermal treatment, and the bulk lifetime was more than doubled from 42.6 µs before the treatment to 93.8 µs after. The simple, SDR-free method presented herein for enhancing the textural uniformity of Si wafers and, hence, solar cell performance, can be employed on an industrial scale without necessitating additional investment in equipment.

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“…Chemical etching involves the selective removal of silicon from the wafer surface using acidic [4]- [9] or alkaline [10]- [15] solutions. By controlling the etchant composition, concentration, and temperature, researchers can precisely engineer the morphology of the resulting pyramidal structures.…”

Section: Introductionmentioning

confidence: 99%

Impact of Infrared Pulsed Laser on Passivated-Textured Silicon Wafers

Rais,

Sinin,

Hamid

et al. 2024

Preprint

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A textured surface on a silicon solar cell effectively improves solar cell performance by reducing reflection losses. The standard process of pyramidal texturization on silicon wafers is widely implemented in manufacturing and laboratory wet chemical etching. Furthermore, the plasma etching process is usually used to create vertical hole texturization on the surface of silicon. In conjunction with that, laser texturization is known as an alternative method for plasma etching due to user-friendly equipment and a chemical-free process. The passivated pyramidal texturing on silicon wafers is classified as normal texturization. Meanwhile, an improvement of texturization with additional laser texturing on normal texturization Si is known as laser passivated-textured. The transmission of pyramidal textured silicon wafer demonstrates less absorption, and this is due to reflection losses on the front surface of the pyramidal textured silicon wafer. Any texturization will increase the short circuit current (Jsc), open circuit voltage (VOC) and efficiency by minimizing the surface reflection loss through effective photon trapping among textured structures. According to infrared (IR) transmission, a higher laser power of 114 W suggests lower reflection losses. Thus, the results from vertical hole texturization on silicon wafers via IR transmissions and cross-section Field Emission Scanning Electron Microscopy (FESEM) reveal a promising photo generation on the surface. The depth level of vertical holes created by laser due to deeper vertical holes that have been created will reduce the distance of minority carriers and trap more incident light among the walls. In addition, this procedure can be implemented as an alternative method to shorten the distance travel of minority carrier charges, and more light can penetrate deeper solar cells. This, ultimately, will overcome any problems related to optical losses.

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Novel Double Acidic Texturing Process for Saw-Damage-Free Kerfless Multicrystalline Silicon Wafers

Cited by 8 publications

References 27 publications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Influence of Temperature on Acid‐Based Wet Chemical Texturization for Ultralow Optical Reflectance (<2%) of mc‐Si Wafer for PV Applications

Pre-Texturing Thermal Treatment for Saw-Damage-Removal-Free Wet Texturing of Monocrystalline Silicon Wafers

Impact of Infrared Pulsed Laser on Passivated-Textured Silicon Wafers

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