Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates

Yarn, Kao-Feng; Liao, Chin-I; Lin, Chen Lin

doi:10.1007/s10854-006-6939-8

Cited by 2 publications

(2 citation statements)

References 42 publications

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“…From experimental results, it is found that the reduction ratio in I-V resistance is ~29.5% and turn-on voltage is ~8.5%, respectively. It can be resonably deduced that the thicker GaN buffer layer posseses fewer interface dislocation which results in the lower turn-on voltage [14]. During the device fabrication, we also use the ITO to replace the Ni/Au and investigate the influence of light output.…”

Section: Resultsmentioning

confidence: 99%

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

Yarn¹,

Chang

Hsieh

2012

AMR

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New MOCVD grown UV (ultra-violet) LEDs using low dislocation density GaN buffer layers on sapphire have been studied. Two different LED characteristics of GaN substrates, i.e. 5um-thick and 20um-thick buffer layers, on sapphire are compared with each other. The enhanced LED characteristics show ~29.5% reduction in current-voltage resistance, ~8.5% reduction in turn-on voltage and output power saturation at higher current. Better GaN buffer quality and heat dissipation due to the lower defect density are believed to the enhanced reason.

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Section: Resultsmentioning

confidence: 99%

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

Yarn¹,

Chang

Hsieh

2012

AMR

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“…The epitaxial films of the AlGaAs-GaAs based solar cell structures were grown in a MOCVD reactor [8]. MO-sources flow were separated to reduce undesirable parastic reaction.…”

Section: Methodsmentioning

confidence: 99%

Study on Solar Materials with New Solar Cell Structure Using Surface Selective Etching and Periodical Barrier Technology

Yarn¹,

Kuo

Hsieh

et al. 2013

AMR

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This study presents a simple technique for improving the power conversion efficiency of a AlGaAs-GaAs based solar cell. A traditional III-V semiconductor solar cell heterojunction structure, i.e. n-GaAs/n-AlGaAs/n-GaAs/i-GaAs/p-GaAs is used. The top n-GaAs/n-AlGaAs structure is responsible for the selective etching stop layer. The selective etched surface barriers associated with polymer gratings with different aspect ratios are produced on solar cell by using the photolithography and Micro Electro Mechanical Systems (MEMS) techniques. A reflective-type diffraction optical grating is fabricated on the surface of the solar cell to redirect the incident light reflected from the solar cell back onto the solar cell surface. The experimental results show that the addition of the optical grating increases the open circuit voltage, Voc, from 4.51 V to 4.73V and improves the maximum output voltage, Vm, from 4.12V to 4.32V. From inspection of surface reflectivity , the average reflectivity is also found to be 13.7% down to 9.9 %.

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Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates

Cited by 2 publications

References 42 publications

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

Study on Solar Materials with New Solar Cell Structure Using Surface Selective Etching and Periodical Barrier Technology

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