Novel dead time controlled gate driver using the current sensor of SiC-MOSFET

Niwa, Akimasa; Imazawa, Takanori; Kimura, Tomonori; Sasaya, Takanari; Isobe, Takanori; Tadano, Hiroshi

doi:10.1109/iecon.2015.7392338

Cited by 13 publications

(2 citation statements)

References 6 publications

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“…The increase of the switching speed in SiC power device can generate problems such as overshoot, oscillation and additional losses [6,7]. Therefore, several different types of VS-GD have been proposed to reduce the overshoots, oscillations, and losses issues of SiC [8,9]. However, VS-GD has the disadvantages of the limited switching speed caused by the gate impedance network and inherently have a low output impedance that is prone to induce oscillation during the switching transients [10].…”

Section: Introductionmentioning

confidence: 99%

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Wu¹,

Wang²,

Gonzalez³

et al. 2021

The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)

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This paper investigates the influence of current-source and voltage-source gate driver on the switching transient performance of trench and planner SiC MOSFETs. Devices have been tested at different temperatures and switching speeds using the designed double-pulse testing system. To evaluate the performance of different gate driving approaches, the dynamic transients of SiC MOSFETs are analysed and discussed using different values of gate resistors and controlled gate currents. The results show that the current-source gate driver has a higher switching speed than voltage-source counterparts at the same transient changing rate of drain-source voltage, resulting in lower operating losses for the power devices. Therefore, current-source gate drivers can facilitate power converters to achieve higher efficiency compared with voltage-source gate drivers.

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Section: Introductionmentioning

confidence: 99%

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Wu¹,

Wang²,

Gonzalez³

et al. 2021

The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020)

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show abstract

“…1,2 In addition to providing modules with current detection function by incorporating sense elements into semiconductor elements, there are other methods of current detection using shunt resistors, Rogowski coils, or CTs (Current Transformers). 3,4 Modules provided with current detection function require using IGBTs or MOS-FETs 5,6 equipped with respective sense elements. 7 The use of shunt resistors is advantageous in that current flowing in a module can be directly measured; however, main current flows in a shunt resistor, thus becoming yet another loss source, while inductance increases.…”

Section: Introductionmentioning

confidence: 99%

Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

Katoh

Nagasu

Suzuki

et al. 2021

Electrical Engineering Japan

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We are developing current-detection technology that directly measures the main current of a high-power semiconductor module using the wiring inductance of the module. In a previous study, we proposed a circuit that detects current by integrating the voltage generated in the wiring inductance between the sense emitter and emitter terminals of the IGBT (Insulated Gate Bipolar Transistor) module. In this study, we developed a total current detection scheme for parallelconnected modules. The basic principle of this scheme is that the total current can be obtained by the total of each voltage generated on the wiring inductance of each module. It was realized by using only one integrating circuit. A challenge for this study was avoiding reflection caused by impedance mismatch. We addressed this by adding a termination resistance with the same value as the characteristic impedance.

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Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode

et al. 2022

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Novel dead time controlled gate driver using the current sensor of SiC-MOSFET

Cited by 13 publications

References 6 publications

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Investigation into the Switching Transient of SiC MOSFET Using Voltage/Current Source Gate Driver

Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode

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