Novel Band Structure Modulations in Two/Three-Dimensional Silicon Carbon Alloys

SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique

“…In this work, we experimentally studied the SiC-QD embedded in SiO 2 , fabricated by double hot-Si + /C + -ion implantation into a SOX layer (Si + /C + -OX) on bulk-Si and the post N 2 annealing. 43) Si-C bond even in the SiO 2 of Si + /C + -OX was confirmed by C1s spectrum of XPS, and approximately 2 nm diameter SiC-QDs with clear lattice spots were successfully observed by HAADF-STEM and CSTEM. In addition, we successfully demonstrated that the PL intensity I PL of SiC-QD in Si + /C + -OX is much stronger than those of single hot-C + -ion implanted oxide (C + -OX) and bulk-Si layers (C + -Si), which is possibly the QD effect on the PL coefficient enhancement.…”

Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate

“…34) In this work, we experimentally studied material structures and band structure modulation of 2D-=3D-Si 1−Y C Y fabricated by hot-12 C + -ion implantation into (100) SOIs at 900 °C, where 0.01 < Y ≤ 0.25, and 5 ≤ N L ≤ 162 (0.5 ≤ d S ≤ 20 nm). 35) We observed the partial formation of 3C-SiC in the C segregation layers near the buried oxide (BOX) interface of Si 0.75 C 0.25 , using high-resolution transmission electron microscope (HRTEM) and high-angle annular-dark-field scanning TEM (HAADF-STEM). We verified very strong PL emission from Si 1−Y C Y at the BOX interface even at N L = 162, and E PH increases to 3 eV with Y increasing to 0.25.…”