Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Panda, Debiprasad; Mantri, Manas Ranjan; Kumar, Rohit; Das, Debabrata; Saha, Rajib; Chakrabarti, Subhananda

doi:10.1016/j.apsusc.2022.154948

Cited by 3 publications

(3 citation statements)

References 38 publications

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“…PL spectroscopy reveals the recombination dynamics of photogenerated carriers. [42][43][44][45] Depending on the trap-state density and thermodynamically favorable transitions, the PL peak position and spectrum intensity are modulated according to the optimized growth conditions. Such characterization plays an essential role while tailoring and optimizing the material synthesis for photonic and optoelectronic applications.…”

Section: Resultsmentioning

confidence: 99%

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Das

Sanchez

Barton

et al. 2023

Adv Materials Technologies

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With the astonishing advancement of present technology and increasing energy consumption, there is an ever‐increasing demand for energy‐efficient multifunctional sensors or transducers based on low‐cost, eco‐friendly material systems. In this context, self‐assembled vertically aligned β‐Ga2−xWxO3 nanocomposite (GWO‐VAN) architecture‐assisted self‐biased solar‐blind UV photodetection on a silicon platform, which is the heart of traditional electronics is presented. Utilizing precisely controlled growth parameters, the formation of W‐enriched vertical β‐Ga2−xWxO3 nanocolumns embedded into the W‐deficient β‐Ga2−xWxO3 matrix is reached. Detailed structural and morphological analyses evidently confirm the presence of β‐Ga2−xWxO3 nanocomposite with a high structural and chemical quality. Furthermore, absorption and photoluminescence spectroscopy explains photo‐absorption dynamics and the recombination through possible donor–acceptor energy states. The proposed GWO‐VAN framework facilitates evenly dispersed nanoregions with asymmetric donor energy state distribution and thus forms build‐in potential at the vertical β‐Ga2−xWxO3 interfaces. As a result, the overall heterostructure evinces photovoltaic nature under the UV irradiation. A responsivity of ≈30 A/W is observed with an ultrafast response time (≈350 µs) under transient triggering conditions. Corresponding detectivity and external quantum efficiency are 7.9 × 1012 Jones and 1.4 × 104%, respectively. It is believed that, while this is the first report exploiting GWO‐VAN architecture to manifest self‐biased solar‐blind UV photodetection, the implication of the approach is enormous in designing electronics for extreme environment functionality and has immense potential to demonstrate drastic improvement in low‐cost UV photodetector technology.

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Section: Resultsmentioning

confidence: 99%

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Das

Sanchez

Barton

et al. 2023

Adv Materials Technologies

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“…Many attempts have been made for more than two decades to deactivate the high surface density of states using several elements and compounds. Presently surface passivation topic is quite active in GaAs-related solar cells [15,[33][34][35][36][37], but without any discovery of a permanent solution to the active surface problem [2,38]. Sulfur (S) passivation has been the most promising surface treatment, significantly improving surface electrical properties and drawing considerable attention [39][40][41][42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi

2023

Mater. Res. Express

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GaAs is well known for its extremely high electron mobility and direct band gap. Owing to the technological advances in silicon-based technology, GaAs has been limited to niche areas. This paper discusses the application of GaAs in molecular electronics and spintronics as a potential field for considering this amazing but challenging material. GaAs is challenging because its surface is characterized by a high density of surface states, which precludes the utilization of this semiconducting material in mainstream devices. Sulfur(S)-based passivation has been found to be significantly useful for reducing the effect of dangling bonds and was researched thoroughly. GaAs applications in molecular spintronics and electronics can benefit significantly from prior knowledge of GaAs and S interactions because S is a popular functional group for bonding molecular device elements with different semiconductors and metals. In this article, the problem associated with the GaAs surface is discussed in a tutorial form. A wide variety of surface passivation methods has been briefly introduced. We attempted to highlight the significant differences in the S-GaAs interactions for different S passivation methods. We also elaborate on the mechanisms and atomic-scale understanding of the variation in surface chemistry and reconstruction due to various S passivation methods. It is envisioned that GaAs and thiol-terminated molecule-based novel devices can exhibit novel device characteristics and bring the added advantage of S-based passivation.

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“…In a prior study, we tried to improve carrier communication by adjusting the size of the surface quantum dot by optimizing the development process. 14 A lot of research has been done on the capping material of InAs QDs, which is used to reduce the overall strain inside the heterostructures. The selection of proper capping material is very crucial as it helps in reducing dislocation and defects.…”

Section: Introductionmentioning

confidence: 99%

A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure

Mantri,

Panda,

Kumar

et al. 2023

Low-Dimensional Materials and Devices 2023

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In the past decade, surface quantum dots (SQDs) have been thoroughly investigated for sensing applications. The SQDs suffer from the limitations of non-uniformity dot distribution and weak oscillator strength, which affect their response to ambient contaminants. We have achieved uniformity by coupling buried quantum dots (BQDs) with SQDs. Moreover, BQDs provide additional carriers to SQDs for enhancing sensitivity. In this study, we have theoretically investigated the impact of varying the capping material of BQDs on their strain and optical properties. Investigations have been carried out with three samples having different capping materials as GaAs (sample A1), InGaAs (sample A2), and InAlGaAs (sample A3). A decreasing trend in the magnitude of hydrostatic strain and an increasing trend in biaxial strain inside the BQD from samples A1-A3 is observed. With a decrease in hydrostatic strain, the conduction band eigenstate lowers towards the band edge resulting in a lowering bandgap. With an increase in biaxial strain, the bandgap lowers due to the heavy hole (HH) and light hole (LH) band splitting. The lowering of the bandgap enhances the luminescence of BQD in sample A3. The computed photo-luminescence (PL) emission wavelength is found to be 1547 nm, 1558 nm, and 1568 nm for GaAs, InAlGaAs, and InGaAs capping respectively. The lowering in the bandgap of BQD leads to band alignment between SQD and BQDs, which may improve the carrier communication between these layers and become a promising candidate for better carrier reservoirs for SQDs in sensor applications.

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Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Cited by 3 publications

References 38 publications

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure

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Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Cited by 3 publications

References 38 publications

Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure

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Product

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Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Rationally Engineered Vertically Aligned β‐Ga₂₋_xW_xO₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response