Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs

Wrzecionko, Benjamin; Kach, Stefan; Bortis, Dominik; Biela, J.; Kolar, Johann W.

doi:10.1109/iecon.2010.5675214

Cited by 26 publications

(12 citation statements)

References 17 publications

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“…To fully exploit the potential of normally-off SiC JFETs, conventional gate driver circuits for unipolar switches need to be adapted for use with these switches. As it has been stated in [20], during on-state the gate-source voltage must not exceed 3 V, while a current of around 150 mA (depending on the desired on-resistance) must be fed into the gate, during switching operation the transient gate voltage should be around ±15 V and the low threshold voltage of less than 0.7 V requires a high noise immunity which is a severe challenge as the device has a comparably low gate-source but high gate-drain capacitance.…”

Section: A Normally-off Sic Jfet Gate Drivementioning

confidence: 66%

“…In fact, the SiC power semiconductors possess intrinsic advantages as high voltage blocking capability, low on-state voltage drop, high switching speed and low thermal resistance [11]. Thus the conduction and switching losses of SiC power devices could be decreased and the operating temperature could be increased in compare by Si power devices.…”

Section: The Sic Power Electronic Devicesmentioning

confidence: 99%

“…It has been stated that its surge current capability is better than Si power MOSFET, also its on resistance is lower than 10 mΩcm 2 and it has very high switching speed due to small intrinsic capacitances, thus it is suitable for high switching frequency high power density application [11].…”

Section: A Normally-off Sic Jfetmentioning

confidence: 99%

See 2 more Smart Citations

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

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Section: A Normally-off Sic Jfet Gate Drivementioning

confidence: 66%

Section: The Sic Power Electronic Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

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“…The SiC JFET is a majority carrier device and its active device structure presents only with P-N junctions. It has been stated that its surge current capability is better than Si power MOSFET, also its on resistance is lower than 10 mΩcm 2 and it has very high switching speed due to small intrinsic capacitances, thus it is suitable for high switching frequency high power density application [7].…”

Section: A Normally-off Sic Junction Field Effect Transistor (Jfet)mentioning

confidence: 99%

Comparative performance evaluation of SiC power devices for high temperature and high frequency matrix converter

Safari

Castellazzi

Wheeler

2013

2013 IEEE Energy Conversion Congress and Exposition

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With the commercial availability of SiC JFET and BJT, their acceptance are expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. The objective of this paper is to assess the performance of bidirectional SiC switch devices for matrix converter. Two 2-phase to 1-phase matrix converters are constructed with SiC JFET and BJT. The improved performance of the SiC switch devices is assessed with reference to measured switching waveforms. Furthermore, the effect of two different SiC switch devices on the overall performance of the matrix converter with particular attention to power circuit losses is investigated.

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“…The need for a controlling current during the conduction is a property in common with the normally-off (enhancement-mode) SiC JFET. This means that the same kind of base-drive units can be used for the two types of devices, but the gate current of the JFET is lower than the base current for the BJT [7], [8], [9].…”

Section: Introductionmentioning

confidence: 99%

A simple high-performance low-loss current-source driver for SiC bipolar transistors

Rąbkowski

Peftitsis

Nee

et al. 2012

Proceedings of the 7th International Power Electronics and Motion Control Conference

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Abstract-The paper proposes a novel topology of a simple base drive unit for silicon carbide bipolar junction transistors (BJTs) based on the current-source principle. Energy stored in a small, air-cored inductor is employed to generate a current peak forcing the BJT to turn-on (10-20ns) very rapidly. The driver enables very high switching performance and very low switching losses of the driven BJT. Both the current source and the unit delivering the steady-state current to the base are supplied from the same low-voltage source in order to limit power consumption. Operation principles as well as selected design issues are discussed in the paper and illustrated by experiments. The 1200V/6A SiC BJT driven by the proposed circuit shows a very fast switching speed.

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Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs

Cited by 26 publications

References 17 publications

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Comparative performance evaluation of SiC power devices for high temperature and high frequency matrix converter

A simple high-performance low-loss current-source driver for SiC bipolar transistors

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