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The electrical characteristics of diodes made from degenerate n-type Ge with either Au or In as the metallic element are reported. The results support a previously published calculation [Phys. Rev. 150, 466 (1966)]. It is significant that the observation can be interpreted quantitatively. Data are presented in terms of the dependence of incremental resistance dv/di or conductance di/dv on applied voltage. Maxima in the incremental resistance predicted to occur at an applied voltage which corresponds to the Fermi degeneracy of the n-type Ge are observed. Data for several values of impurity, density, and temperature are shown to correspond quantitatively with the prediction. However, evidence suggests the importance of band tailing, a feature not included in the calculation. Observation of several additional effects is also reported. Pronounced structure near zero bias appears when the metallic element is in the superconducting state. This is well described by the BCS theory. The threshold for tunneling into the conduction-band minimum Γ2′ was also observed. From this the separation in energy with respect to the L-band minima is determined to be Γ2′−L=0.154±0.003 eV. Anomalous structure at zero bias similar to that observed by others in p-n junctions and metal-oxide-metal structures is reported but not interpreted.
The electrical characteristics of diodes made from degenerate n-type Ge with either Au or In as the metallic element are reported. The results support a previously published calculation [Phys. Rev. 150, 466 (1966)]. It is significant that the observation can be interpreted quantitatively. Data are presented in terms of the dependence of incremental resistance dv/di or conductance di/dv on applied voltage. Maxima in the incremental resistance predicted to occur at an applied voltage which corresponds to the Fermi degeneracy of the n-type Ge are observed. Data for several values of impurity, density, and temperature are shown to correspond quantitatively with the prediction. However, evidence suggests the importance of band tailing, a feature not included in the calculation. Observation of several additional effects is also reported. Pronounced structure near zero bias appears when the metallic element is in the superconducting state. This is well described by the BCS theory. The threshold for tunneling into the conduction-band minimum Γ2′ was also observed. From this the separation in energy with respect to the L-band minima is determined to be Γ2′−L=0.154±0.003 eV. Anomalous structure at zero bias similar to that observed by others in p-n junctions and metal-oxide-metal structures is reported but not interpreted.
than two orders of magnitude by the presence of 1% Ni 2+ ions). Ni 2+ emission may also be excited through the Mn 2+ bands near 4300 A, but these are superimposed on a 3 T 1 band of Ni 2+ . Particularly interesting is the fact that the efficiency of Mn 2+ -Ni 2+ energy transfer is high even for very low Ni 2+ concentration. For example, in MnF 2 containing 15 ppm Ni 2+ ions, the quantum efficiency for Ni 2+ emission is about 30% at 4.2°K when exciting the 4 7\ band of Mn 2+ . To illustrate this figure somewhat differently, consider a sphere about each Ni 2+ ion such that all Mn 2+ ions within the sphere transfer their excitation to Ni 2+ , while those outside do not. The radius of the sphere so calculated for MnF 2 containing 15 ppm Ni 2+ ions is about 60 A. These findings indicate that energy transport between Mn 2+ ions is extremely long range, just as suggested previously for nickel compounds. 2 We are grateful to C. G. B. Garrett and G. K. Wertheim for several helpful suggestions on the manuscript.
Superconducting tunnelling effects were observed for mechanically contacted Nb–Si, Pb–Si, and Nb–GaAs junctions. The I–V curves of Nb–Si junctions largely deviate from the usual BCS curve. Deviations for Nb–GaAs and Pb–Si junctions are much smaller than that for a Nb–Si junction. This large deviation is explained by the uniformly distributed surface states on the boundary. The upper critical fields H c2 and H c3 of the junctions are much larger than those of a bulk niobium.
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