Note: Self-biased magnetic field sensor using end-bonding magnetoelectric heterostructure

Abstract

A high sensitivity magnetic field sensor based on magnetoelectric (ME) coupling is presented. The ME sensor FeCuNbSiB/Nickel-PZT-FeCuNbSiB/Nickel is made by bonding magnetization-graded magnetostrictive materials FeCuNbSiB/Nickel at the free ends of the piezoelectric Pb(Zr1-x,Tix)O3 (PZT) plate. Experiments indicate that the proposed sensor has a zero-bias field sensitivity of 14.7 V/Oe at resonance, which is ∼41.6 times larger than that of previous FeCuNbSiB-PZT-FeCuNbSiB. Furthermore, without external biased field, it can detect dc magnetic field changes as small as ∼9 nT near the resonant frequency. This proposed ME sensor provides new pathways to reducing or even eliminating the need of bias fields for ME sensors.

Giant low-frequency multipeak self-biased magnetoelectric properties in four-phase structure with stepped ultrasonic horn

“…Using the magnetization-graded ferromagnetic materials, a large piezomagnetic coefficient at zero-biased field can be obtained. [16][17][18] The dimensions of terfenol-D plate and FeCuNbSiB foil were 12 × 6 × 0.8 mm 3 (l × w × t) and 12 × 6 × 0.025 mm 3 (l × w × t), respectively. The magnetostrictive layers (terfenol-D and FeCuNbSiB) were magnetized along the longitudinal direction.…”

Self-biased magnetoelectric coupling characteristics of three-phase composite transducers with nanocrystallin soft magnetic alloy

“…Previous studies have shown that the laminate composites consisting of magnetostrictive and piezoelectric materials provide high ME effects [1][2][3][4][5][6], offer potential applications in magnetic field sensors [7][8][9][10] and ME transducers [11,12]. The experimental and analytical results on ME laminates have shown that the ME composites exhibit significant ME effects only near an optimum bias magnetic field (H dc ) [1][2][3][4][5][6][7][8][9][10].…”

“…The experimental and analytical results on ME laminates have shown that the ME composites exhibit significant ME effects only near an optimum bias magnetic field (H dc ) [1][2][3][4][5][6][7][8][9][10]. Hence, achieving self-biased ME effect has become of great research interest recently [12][13][14].…”

Self‐biased magnetoelectric composite for energy harvesting

“…Due to the bonding of a magnetization-graded FeCuNbSiB/Ni layer to the free end of a piezoelectric PZT plate, a broadband SME structure with a high peak value, namely, FeCuNbSiB/ (Ni-PZT-Ni)/FeCuNbSiB, was built (Figure 7B). 177,178 With a magnetization-graded layer and end-bonding design, the α SME of FeCuNbSiB/Ni/PZT/FeCuNbSiB/Ni structures reached 183.2 V cm −1 Oe −1 . Due to the end-bonding design, the adverse effects of the interface layer between the magnetostrictive and piezoelectric phases were reduced, resulting in the enhancement of ME coupling.…”