Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

Ray, M.P.; Baldwin, Jeffrey W.; Feygelson, Tatyana I.; Butler, James E.; Pate, Bradford B.

doi:10.1063/1.3595678

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…15 This region can be etched by boiling the diamond in an oxidizing acid solution or in an O 2 plasma environment. This approach has been used to lift off thin diamond layers and can be useful in ion beam patterning and machining of diamond [7]. The damaged layer after implantation and annealing apart from having graphitic carbon, also has amorphous carbon in the sp n form where 20 n=1,2,3.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Surface Brillouin scattering on annealed ion-implanted CVD diamond

Motochi

Naidoo

Mathe

et al. 2015

Diamond and Related Materials

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Section: Accepted Manuscriptmentioning

confidence: 99%

Surface Brillouin scattering on annealed ion-implanted CVD diamond

Motochi

Naidoo

Mathe

et al. 2015

Diamond and Related Materials

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“…The possibility of creating buried conductive structures in the diamond bulk with MeV ion implantation has not been extensively studied, particularly because it poses the challenge of developing a suitable strategy to implement their electrical connection with the sample surface at specific locations. Different methods have been explored to address this issue, such as laserinduced graphitization [39], high-voltage-induced thermal breakdown [40], multiple energy ion implantation [34] and laser ablation [41]. In a preliminary study [42], we proposed the use of 3D masks to modulate the penetration of MeV ions in diamond, thus allowing the direct ; the total number of vacancies per ion is 46, 47 and 52 for the three ion energies, respectively; the end-of-range damage peaks are clearly visible for all ion energies.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

et al. 2012

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We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (∼MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several µm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM), we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular, that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization at both 2 room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert into a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.

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“…The interposition of a diamond-like-carbon layer [6] has been also tested. Besides the above-mentioned techniques to obtain ohmic contacts, the ion-beam-induced graphitization of diamond has been extensively investigated [7,8] as well as laser-induced graphitization [9,10]. The advantages of these approaches consist in the possibility of obtaining conductive electrodes in an all-carbon environment, in the high thermal stability of the final structures, and in the possibility of defining contacts and electrodes into high-purity substrates without involving growth stages or complex lithographic processes.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline CVD diamond pixel array detector for nuclear particles monitoring

et al. 2013

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We report the 90 Sr beta response of a polycrystalline diamond pixel detector fabricated using metal-less graphitic ohmic contacts. Laser induced graphitization was used to realize multiple squared conductive contacts with 1mm × 1mm area, 0.2 mm apart, on one detector side while on the other side, for biasing, a 9mm × 9mm large graphite contact was realized. A proximity board was used to wire bonding nine pixels at a time and evaluate the charge collection homogeneity among the 36 detector pixels. Different configurations of biasing were experimented to test the charge collection and noise performance: connecting the pixel at the ground potential of the charge amplifier led to best results and minimum noise pedestal. The expected exponential trend typical of beta particles has been observed. Reversing the bias polarity the pulse height distribution (PHD) does not changes and signal saturation of any pixel was observed around ±200V (0.4 V/µm). Reasonable pixels response uniformity has been evidenced even if smaller pitch 50÷100 µm structures need to be tested.

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Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

Cited by 4 publications

References 15 publications

Surface Brillouin scattering on annealed ion-implanted CVD diamond

Surface Brillouin scattering on annealed ion-implanted CVD diamond

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

Polycrystalline CVD diamond pixel array detector for nuclear particles monitoring

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