Note: All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches

Hu, Long; Su, Jiancang; Ding, Zeyu; Qingsong, Hao; Yang, Fan; Liu, Chunliang

doi:10.1063/1.4960397

Cited by 7 publications

(8 citation statements)

References 13 publications

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“…Its expression is: The multiplication rate of 998 at the lowest trigger optical energy of only 0.567 nJ was achieved. And we list a table to compare the key performance parameters of PCSS with commercial devices and previous works [3,8], as shown in TABLE I.…”

Section: B Avalanche Light Energy Threshold and Multiplication Ratementioning

confidence: 99%

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998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ

Shi

Dong

et al. 2020

IEEE Access

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In this paper, the results show that the avalanche mode of GaAs photoconductive semiconductor switches (PCSS) requires only a low trigger optical energy of 0.567 nJ to achieve. At the bias electric field is 94 kV/cm, a trigger optical energy with sub-Nano Joule is used to trigger the PCSS, and the multiplication rate can be as high as 988. We have presented avalanche delay characteristics under the different bias electric voltage, and the physical mechanism of the avalanche delay time is analyzed. This article shows a high multiplication rate ultrafast pulse source with low-energy triggering. INDEX TERMS Low energy triggering, Photoconductive semiconductor switches (PCSS), Multiplication, Avalanche mode.

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Section: B Avalanche Light Energy Threshold and Multiplication Ratementioning

confidence: 99%

“…Avalanche photoconductive semiconductor switches (PCSSs) is widely applied in beam accelerators, ultra-wide band microwave pulses, and in many electrical and optical short pulse applications [1][2][3]. The avalanche PCSS operating mode relies on the photon-induced carrier multiplication process in GaAs materials.…”

Section: Introductionmentioning

confidence: 99%

998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ

Shi

Dong

et al. 2020

IEEE Access

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“…Even without careful optimization of the T-junction a relative peak-to-peak disturbance of the flattop of the transmitted pulse is around 2%. The considered pulse can be generated by a fast solid-state HV pulser, see, for example, [29]. Due to the transverse nature of the TEM stripline mode and symmetry of the stripline-loop, the magnetic fields on the cathode cancel while the electric ones add up in phase as illustrated in Fig.…”

Section: A a Stripline-based Cathode Configurationmentioning

confidence: 99%

“…Quasi-square-shaped HV pulses produced by modern solid-state pulsers have a stable flattop region, see Ref. [29] and references therein. Hence, electrons emitted from the cathode experience a quasistatic electric field in the cathode-gate-electrode gap and their trajectories may be examined in an electrostatic approximation using the simulation code EGUN [34,35].…”

Section: A Electrostatic Approachmentioning

confidence: 99%

Design study of a low-emittance high-repetition rate thermionic rf gun

Opanasenko

Mytrochenko

Zhaunerchyk

et al. 2017

Phys. Rev. Accel. Beams

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We propose a novel gridless continuous-wave radiofrequency (rf) thermionic gun capable of generating nC ns electron bunches with a rms normalized slice emittance close to the thermal level of 0.3 mm mrad. In order to gate the electron emission, an externally heated thermionic cathode is installed into a stripline-loop conductor. Two high-voltage pulses propagating towards each other in the stripline-loop overlap in the cathode region and create a quasielectrostatic field gating the electron emission. The repetition rate of pulses is variable and can reach up to one MHz with modern solid-state pulsers. The stripline attached to a rf gun cavity wall has with the wall a common aperture that allows the electrons to be injected into the rf cavity for further acceleration. Thanks to this innovative gridless design, simulations suggest that the bunch emittance is approximately at the thermal level after the bunch injection into the cavity provided that the geometry of the cathode and aperture are properly designed. Specifically, a concave cathode is adopted to imprint an Ƨ-shaped distribution onto the beam transverse phase-space to compensate for an S-shaped beam distribution created by the spherical aberration of the aperture-cavity region. In order to compensate for the energy spread caused by rf fields of the rf gun cavity, a 3rd harmonic cavity is used. A detailed study of the electrodynamics of the stripline and rf gun cavity as well as the beam optics and bunch dynamics are presented.

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“…Therefore, in presence of GaAs PCSSs the trigger laser energy can be reduced from the mJ-to the µJ-order and a compact pulsed laser diode (LD) can then replace more complex tabletop laser sources. The cost of the PCSSs and the size of the trigger laser source can thus be significantly reduced [3]. In conclusion, GaAs PCSSs are valuable solidstate devices, which possess attractive characteristics, such as large current, ultrafast switching, low-energy triggering, and low jitter [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

1.6-kV 1.5-kA GaAs Avalanche Semiconductor Switch Triggered by 4 μJ Laser Diode

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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A current of 1.54 kA was obtained under a bias voltage of only 1.6 kV by employing a single photoconductive semiconductor switch (PCSS) excited by a laser diode (LD) with energy of 4 μJ. In this work, an opposed contact structure PCSS was used instead of a lateral structure one. We show that a avalanche multiplication rate of PCSS as high as 258 has been obtained. The effects of the electric field strength and of the capacitance on the current waveform were investigated. Moreover, the damping degree was calculated in combination with the current waveform. The calculation indicates that the current attenuation degree increases upon the increase of the capacitance for a fixed value of the electric field strength, whereas the current attenuation degree decreases upon the increase of electric field strength for a fixed charging capacitance. The results obtained in this work show that, by employing opposed contact structure PCSSs in combination with a relatively low bias voltage and laser pulse energy, high-current and long pulse power devices based on inexpensive and compact sources can be produced.

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Note: All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches

Cited by 7 publications

References 13 publications

998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ

998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ

Design study of a low-emittance high-repetition rate thermionic rf gun

1.6-kV 1.5-kA GaAs Avalanche Semiconductor Switch Triggered by 4 μJ Laser Diode

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