Normally-off recessed gate β-Ga2O3 MOSHFETs with a modulation-doped heterostructure back-barrier
Gökhan Atmaca,
Ho-Young Cha
Abstract:This study demonstrates enhancement-mode recessed-gate β-Ga2O3 metal–oxide–semiconductor heterojunction field-effect transistors (MOSHFETs) with a combination of the MOS channel and a modulation-doped heterostructure to improve maximum drain current and on-resistance (RON). In this proposed device concept, modulation doping in the heterostructure back-barrier inserted into the MOS channel increases the electron density in the MOS channel while maintaining a normally-off operation. First, 2D simulations of enha… Show more
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