Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

Wang, Yanfeng; Chang, Xiaohui; Zhang, Xiaofan; Fu, Jiao; Fan, Shuwei; Bu, Renan; Zhang, Jingwen; Wang, Wei; Wang, Hongxing; Wang, Jingjing

doi:10.1016/j.diamond.2017.11.016

Cited by 40 publications

(14 citation statements)

References 25 publications

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“…5(c)) [21], [22]. Based on the thickness of 5.0 nm of the alumina layer, the permittivity is calculated to be 2.7, which is at the same level with the results of Wang et al [15] and Hirama et al [18]. However, this value is lower than the reported value of 6∼9 [23]- [25].…”

Section: Resultssupporting

confidence: 76%

“…The other is that annealing H-diamond covered by 4-nm aluminum layer in the air at 180 • C for 10 h also leads to normally-off MOSFETs with the alumina gate dielectric [15]. Our normally-off device process combines those from References [5] and [15] but is much simpler, and some process condition changes are critical to reduce the channel resistance. Compared with Reference [5], we shortened the time of UV ozone treatment, and the photoresist above the source-gate and drain-gate interspaces also alleviate the influence of UV ozone.…”

Section: Resultsmentioning

confidence: 99%

“…Compared with Reference [5], we shortened the time of UV ozone treatment, and the photoresist above the source-gate and drain-gate interspaces also alleviate the influence of UV ozone. As for the thermal oxidation of aluminum similar to Reference [15], both the temperature and the time are much reduced and it also helps to protect the p-type conductivity of the H-diamond exposed in the air.…”

Section: Resultsmentioning

confidence: 99%

“…Kawarada et al [5] demonstrated the 2-kV normally-off C-H diamond MOSFETs with partial C-O channel and ALD-Al 2 O 3 gate dielectric. In addition, long time annealing H-diamond in the air at 180 • C in the preparation of the Al 2 O 3 gate dielectric by thermal oxidation of aluminum also achieved the normallyoff devices [15]. However, most reported normally-off H-diamond devices showed much higher on-resistance and lower output current compared to the normally-on devices with the same gate lengths.…”

Section: Introductionmentioning

confidence: 99%

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High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Ren

Chen

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of −1.0 V, and a drain current of 51.6 mA/mm at V GS = V DS = −4.5 V and an on-resistance of 65.39 •mm. The transconductance keeps increasing when V GS shifts from V TH toward more negative direction, and reaches the record high value of 20 mS/mm at V GS of −4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of −4 V < V GS < −2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric. INDEX TERMS Single crystalline diamond, normally-off, MOSFET.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Ren

Chen

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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“…Along with the high thermal conductivity, large carrier saturation velocity, high carrier mobility, and chemical inertness, diamond is considered a fascinating semiconductor with exceptional physical properties for high‐power, high‐frequency, and harsh environmental (i.e., strong radiation and high‐temperature) electronics applications . The 2‐dimensional hole gas (2DHG) on the hydrogen‐terminated diamond (H‐diamond) surface induced by atmospheric adsorbates or solid‐state acceptor transfer doping has been widely used to develop diamond electronic devices . The 2DHG on H‐diamond surface has a low activation energy, a hole density of ≈10 13 cm −2 , and a mobility of ≈100 cm 2 V −1 s .…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Yang

Sang

Liao

et al. 2019

Physica Status Solidi (a)

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Recent marked advances in diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have raised the issue of gate reliability. Herein, the threshold voltage stability of MOSFETs based on hydrogen-terminated diamond surface conductivity is examined. The electrical output characteristic curves are characterized by cyclic gate sweeping from reverse to forward gate bias (RF) and from forward to reverse gate bias (FR), respectively. The characteristics of drain current versus drain voltage are affected by the gate bias sweeping direction. Marked hysteresis is also observed in the transfer curves for the RF and FR gate sweeping. The different gate sweeping directions induce threshold voltage variation and hole mobility change. The facts that 1) no extra interface states are generated due to gate sweeping and 2) the trapped charge density depends on the gate oxide thickness, reveal that charge trapping occurs at the border of the gate oxide.

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Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

Zhang

Chen

Ren

et al. 2019

Physica Status Solidi (a)

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Hydrogen‐terminated diamond (H‐diamond) metal–oxide–semiconductor field‐effect transistors (MOSFETs) are fabricated, and a partial C–O channel is formed by UV‐ozone treatment of the H‐diamond surface to help realize normally off devices. The first parameterization of the vertical‐field (Feff)‐dependent effective hole mobility (μeff) in a normally off diamond FET is conducted using the fabricated MOSFETs with a gate length of 40 μm fat field‐effect transistors (FATFET). The FATFET with a threshold voltage of −0.69 V shows a low on‐resistance of 475.1 Ω mm and a record high drain current of −3.8 mA mm−1 for normally off H‐diamond MOSFETs with gate lengths over 20 μm. The extracted μeff ranges from 127 cm2(V s)−1 (at VGS = −4.5 V) to 276 cm2(V s)−1 (at VGS = −1.5 V). Both μeff versus Feff and μeff versus VGS relations can be well fitted by the semiempirical formulas used for silicon counterparts. The resulting low‐field mobility without vertical‐field degradation for the two relations is 376 cm2(V s)−1 and 418 cm2(V s)−1, respectively. The origin of this difference is also given.

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Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

Cited by 40 publications

References 25 publications

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

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