Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Royer, C. Le; Mohamad, B.; Biscarrat, J.; Vauche, Laura; Escoffier, René; Buckley, J.; Beçu, S.; Riat, R.; Gillot, C.; Charles, Matthew; Ruel, Simon; Pimenta-Barros, Patricia; Possémé, N.; Besson, P.; Boudaa, F.; Vannuffel, C.; Vandendaele, W.; Viey, A. G.; Krakovinsky, A.; Jaud, Marie-Anne; Modica, R.; Iucolano, Ferdinando; Tiec, R. Le; Levi, Shimon; Orsatelli, Marc; Gwoziecki, R.; Sousa, V.

doi:10.1109/ispsd49238.2022.9813672

Cited by 12 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The four other field plates are designed for the electric field distribution tailoring to meet the low current collapse and the breakdown voltage specification. This field plate system allows the transistor to withstand at least 650 V in blocking mode [15]. To simulate this device, Synopsys ® Sentaurus TM [16] (Synopsys, San Jose, United States) was used.…”

Section: Methodsmentioning

confidence: 99%

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

et al. 2022

View full text Add to dashboard Cite

Many kinds of defects are present in the different layers of GaNonSi epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.

show abstract

Section: Methodsmentioning

confidence: 99%

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

et al. 2022

View full text Add to dashboard Cite

show abstract

“…This study aims to assess the environmental impacts of producing a GaN semiconductor power device. Since the normally-off GaN devices offer the best cost/benefit from an application point of view (lower switching and conduction losses) [8], this study focuses on the normally-off GaN metal-oxide-semiconductor (MOS) channel high-electron-mobility transistor (HEMT), also called MOSc-HEMT, developed at CEA-LETI [5]. Inventory data for the production was obtained from in-house CEA-LETI R&D microelectronics clean rooms, where GaN on Si semiconductor technology is developed on 200 mm silicon wafers with a CMOS compatible process flow, with 2021 data.…”

Section: Goal and Scope Definitionmentioning

confidence: 99%

“…In addition, most of the current research available in the field of semiconductors focuses rather on Si-based semiconductors for information technology or solar cells and does not take into account specificities of power semiconductors such as wafer thickness, specific processing, number of mask levels, etc. In this paper, we evaluate the environmental impacts at the fabrication of a GaN/Si transistor, of specifications 650 V and 30 A [5], on a CMOS-compatible process flow on 200 mm Si substrate, with LCA methodology.…”

Section: Introductionmentioning

confidence: 99%

Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Vauche,

Guillemaud,

Lopes Barbosa

et al. 2024

Sustainability

View full text Add to dashboard Cite

Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. Finally, we compare this result with publicly available data for Si, GaN and SiC power devices.

show abstract

“…For safety reasons, especially for power applications, several technologies are being developed to build normally OFF structures. 7 Among the various options, the fully recessed gate metal-oxidesemiconductor-channel high-electron-mobility transistor (MOSc-HEMT) is a promising solution 8 (see Figure 1A). In this type of structure, a full removal of the AlGaN layer and a partial etching of the GaN are required.…”

Section: Introductionmentioning

confidence: 99%

“…Among the various options, the fully recessed gate metal–oxide–semiconductor‐channel high‐electron‐mobility transistor (MOSc‐HEMT) is a promising solution 8 (see Figure 1A). In this type of structure, a full removal of the AlGaN layer and a partial etching of the GaN are required.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al₂O₃ thickness and oxidant precursors on the interface composition and contamination in Al₂O₃/GaN structures

Spelta,

Martinez,

Veillerot

et al. 2024

Surface & Interface Analysis

View full text Add to dashboard Cite

In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O3/H2O‐based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl− and F−) at this Al2O3/GaN interface.

show abstract

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Cited by 12 publications

References 9 publications

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Effect of Al₂O₃ thickness and oxidant precursors on the interface composition and contamination in Al₂O₃/GaN structures

Contact Info

Product

Resources

About

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Cited by 12 publications

References 9 publications

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

Contact Info

Product

Resources

About

Effect of Al₂O₃ thickness and oxidant precursors on the interface composition and contamination in Al₂O₃/GaN structures