Nonvolatile Ternary Memory Devices Based on MoO₃ Nanoparticles Embedded in Conjugated Copolymer with Hierarchy Charge Traps

Abstract

A D−A conjugated polymer was used in fabrication of memory devices. However, devices using polymers as active layers alone do not lead to satisfactory results. In this paper, we have synthesized a donor−acceptor conjugated polymer by the Suzuki coupling reaction. The memory devices prepared by the polymer exhibit a ternary memory behavior. MoO 3 nanoparticles have a large number of oxygen vacancies on their surface that can act as charge traps. MoO 3 nanoparticles (NPs) are mixed with polymers to prepare memory devices for improved memory performance. The relationship between the mass percentage of MoO 3 NPs and the storage performance and mechanism of the storage device is studied. The first and second threshold voltages of the memory device are −0.5 and −0.75 V, respectively. A current ratio of 1:10 2.14 :10 4.75 for the "0″, "1", and "2" resistance states of the device indicates a low probability of read/write errors. This work shows that polymer-embedded nanoparticle materials have practical application value in the field of next-generation nonvolatile memories.