Nonvolatile SRAM Cell

Wang, Wei; Gibby, Aaron; Wang, Zheng; Chen, Tze Wee; Fujita, Shinobu; Griffin, P.B.; Nishi, Yoshio; Wong, S.S.

doi:10.1109/iedm.2006.346730

Cited by 59 publications

(23 citation statements)

References 1 publication

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“…In 2006, a 7T-2R (seven transistors and two programmable resistors made of eNVM devices) SRAM structure based on phase change memory (PCM) has been proposed [51]. Soon after, a proof of concept of 6T-2R NV-SRAM was demonstrated by Wang et al [52]. Evolving from these ideas, an 8T-2R cell based on RRAM has been demonstrated in 2012 with good performance characteristics such as 10-ns T store , G 2-V V store , and G 50-A I store [53].…”

Section: A Circuit Designsmentioning

confidence: 98%

Monolithic 3-D FPGAs

et al. 2015

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| This paper reviews the recent developments in monolithic 3-D field-programmable gate arrays (FPGAs). Enabling technologies are covered. Three representative groups of monolithic 3-D FPGAs are discussed: ''normally off, instantly on'' FPGAs, FPGAs with 3-D switches, and FPGAs with 3-D configuration memory and pass transistors. The circuit designs and implementations of each group are presented and examined.

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Section: A Circuit Designsmentioning

confidence: 98%

Monolithic 3-D FPGAs

et al. 2015

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“…Previous work adopted various types of emerging memory devices, such as FeRAM, STT-MRAM (MTJ), PCRAM, and RRAM (memristor) in nvSRAM cells [9,10,7,11,12,13,14,15]. The 4T2R and 7T2R nvSRAMs [9,11,12,14] achieve small cell area at the expense of significant DC-short current at storage nodes (Q and QB).…”

Section: Nonvolatile Srammentioning

confidence: 99%

“…The 4T2R and 7T2R nvSRAMs [9,11,12,14] achieve small cell area at the expense of significant DC-short current at storage nodes (Q and QB). To cut off this DC-short current at storage nodes, extra transistors are required at the expense of larger cell area for nvSRAMs [7,13,15].…”

Section: Nonvolatile Srammentioning

confidence: 99%

Ambient energy harvesting nonvolatile processors

Liu

et al. 2015

Proceedings of the 52nd Annual Design Automation Conference

124

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Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to traditional processors. Nonvolatile processors are promising to solve such a problem due to their advantage of zero leakage and efficient backup and restore operations. To optimize the nonvolatile processor design, this paper proposes new metrics of nonvolatile processors to consider energy harvesting factors for the first time. Furthermore, we explore the nonvolatile processor design from circuit to system level. A prototype of energy harvesting nonvolatile processor is set up and experimental results show that the proposed performance metric meets the measured results by less than 6.27% average errors. Finally, the energy consumption of nonvolatile processor is analyzed under different benchmarks.

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“…Beyond applications in high-density memory for data storage, electrochemical metallization (ECM) devices have attracted interest in a broad range of applications such as non-volatile standard random access memory (SRAM), 76 reconfi gurable logic, and neuromorphic systems. A non-volatile SRAM is expected to effectively reduce standby power consumption presently observed in conventional SRAM cells by storing the state information in a pair of resistive switching cells, such as ECM cells.…”

Section: Further Outlook For Applications Of Ecm Cellsmentioning

confidence: 99%

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

et al. 2012

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conference will provide essential information on the breadth and depth of current neutron-related research worldwide. This year's conference will feature a combination of invited and contributed talks, posters sessions, tutorials and an industrial exhibit. The last day of the conference features a tour of the NIST Center for Neutron Research. Mark your calendars today and plan to attend ACNS 2012! SCIENTIFIC PROGRAMThe four-day conference will feature oral and poster presentations covering:For the most up-to-date information on ACNS 2012, visit www.mrs.org/acns-2012

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Nonvolatile SRAM Cell

Cited by 59 publications

References 1 publication

Monolithic 3-D FPGAs

Monolithic 3-D FPGAs

Ambient energy harvesting nonvolatile processors

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

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