Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Inoue, Hiroyuki; Matsuzaki, Takashi; Nagatsuka, Shuhei; Okazaki, Yutaka; Sasaki, Toshinari; Noda, K.; Matsubayashi, Daisuke; Ishizu, Tomoko; Onuki, Tatsuya; Isobe, Atsuo; Shionoiri, Yutaka; Kimura, Kiyoshi; Okuda, Takashi; Koyama, Jun; Yamazaki, Shunpei

doi:10.1109/jssc.2012.2198969

Cited by 82 publications

(59 citation statements)

References 11 publications

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“…7,8 We have demonstrated its applicability to various products such as low-power displays, non-volatile memory devices, and large-scale integrations (LSIs). [9][10][11][12][13][14][15] It is noted that the c-axis-aligned crystal (CAAC)-IGZO technology has been already commercialized in a mass production for low-power applications. Figure 1 is a cross-sectional transmission electron microscope (TEM) image of the CAAC-IGZO film used for a channel in a TFT in a smartphone.…”

Section: Introductionmentioning

confidence: 99%

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

et al. 2014

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Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.

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Section: Introductionmentioning

confidence: 99%

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

et al. 2014

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“…SRFFs using CAAC-OS transistors are used as nonvolatile registers in the CPU and peripheral circuits, and nonvolatile oxide semiconductor random access memory (NOSRAM) is used as the local memory. 28,29) All the volatile registers in the MCU can retain data for a long time. The PMU controls backup and recovery processing of the SRFFs.…”

Section: Centralized Methods and Distributed Methodsmentioning

confidence: 99%

A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

Ohshima¹,

Kobayashi²,

Nishijima³

et al. 2014

Jpn. J. Appl. Phys.

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A low-power normally-off microcontroller unit (NMCU) having state-retention flip-flops (SRFFs) using a c-axis aligned crystalline oxide semiconductor (CAAC-OS) such as indium gallium zinc oxide (IGZO) transistors and employing a distributed backup and recovery method (distributed method) is fabricated. Compared to an NMCU employing a centralized backup and recovery method (centralized method), the NMCU employing the distributed method can be powered off approximately 75 µs earlier after main processing and can start the main processing approximately 75 µs earlier after power-on. The NMCU employing the distributed method can reduce power overhead by approximately 85% and power consumption by approximately 18% compared to the NMCU employing the centralized method. The NMCU employing the distributed method can retain data even when it is powered off, can back up data at high speed, and can start effective processing immediately after power-on.The NMCU could be applied to a low-power MCU. Single crystalNanocrystal CAAC Fig. 1. (Color online) OS crystal structures.

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“…To realize that, all the layer in the flash memory should be transparent. The amorphous oxide, such as zinc oxide, zinc tin oxide, indium gallium zinc oxide, and so on, have already been used to be applied as semiconductor channel due to their high mobility (about 10–30 cm 2 V −1 s −1 ) and transparency to visible light.…”

Section: Flash Memorymentioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

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As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non‐volatile memories are of great importance in human's daily life. High‐performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low‐power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo‐tunable memories.

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Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Cited by 82 publications

References 11 publications

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

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