Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film

Abstract

Matt, "Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film" (2003). Stephen Ducharme Publications. 9.

Ferroelectric nanomesa formation from polymer Langmuir–Blodgett films

“…6,7 The VDF copolymers typically crystallize from solution to form a jumble of crystalline lamellae with highly folded chains and dimensions of order 25 nm along the chains and 1 -10 m perpendicular to the chains. 1 Annealing and drawing can improve crystallinity and microstructure, even to the point of producing highly oriented crystals with predominately straight chains.…”

Different approaches to adjusting band offsets at intermolecular interfaces

“…Organic heterojunction diodes [12,13] and transistors [14,15] have been fabricated with the crystalline ferroelectric P(VDFTrFE). As the copolymer poly(vinylidene fluoride with trifluoroethylene) is a ferroelectric, transistors, both fully organic heterojunctions [14] and [15] and hybrid heterojunctions with an inorganic SiO 2 buffer layer integrated state gate over silicon [16,17], exhibit gate voltage-dependent hysteresis, indicating the potential of P(VDF-TrFE) copolymers for nonvolatile random access memory devices. Evidence for interface dipole coupling, however, is better demonstrated in the diode geometry, as described here.…”

Changing band offsets in copper phthalocyanine to copolymer poly(vinylidene fluoride with trifluoroethylene) heterojunctions

“…The copolymer poly ͑vinylidene fluoride with trifluoroethylene͒ has been used as a component in ferroelectric transistors, both fully organic heterojunctions 10,11 and hybrid heterojunctions with an inorganic SiO 2 buffer layer integrated state gate over silicon. 12,13 Both types of transistors exhibit gate voltage dependent hysteresis, indicating the potential of P͑VDF-TrFE͒ copolymers for nonvolatile random access memory devices. Evidence for interface dipole coupling, however, is better demonstrated in the diode geometry, as described here.…”