Nonvolatile memory devices based on few-layer graphene films

Abstract

We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.

Temperature- and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets

“…FLG and GNs are widely applied in nanoelectronics [7][8][9], supercapacitors [10][11][12], transparent conducting thin films [13][14][15], solar energy fuel cells [16][17][18], biochemical analysis and detection [19,20], and electromagnetic interference shielding and microwave absorption [21,22].…”

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

“…A number of reports have utilized graphene or graphene oxide in non-volatile memory devices, such as an FET channel, a charge-trapping layer or an electrode [16][17][18][19][20][21][22] . It was shown that the large hysteresis in the gate characterization curves of graphene FETs (GFETs) can be applied for memory device operation 23 .…”

Ballistic electron propagation through periodic few-layer graphene nanostructures

“…Electrostatic gates in close proximity to graphene or few-layer graphene create potential barriers that modulate the charge carrier concentration and transport through these structures, controlling also the bandgap Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/physe opening or the energy-band overlap in the few-layer graphene case [12]. A bandgap modulation of few-layer graphene is essential in developing devices such as field-effect transistors [13], organic field-effect transistors [14], non-volatile memory devices [15], or nano-electro-mechanical devices [16].…”