Abstract:Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by currentinduced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switching by placing two separated CoFeB magnetic bits at … Show more
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