2013
DOI: 10.1016/j.tsf.2012.07.135
|View full text |Cite
|
Sign up to set email alerts
|

Nonvolatile floating gate memory characteristics of Sb2Te–SiO2 nanocomposite thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 24 publications
0
1
0
Order By: Relevance
“…The non-linear optical properties of these materials open up prospects for their application in optoelectronics [6][7][8]. These compositions are also advanced materials for manufacturing non-volatile memory based on the phase transition effect (PCM) [9][10][11][12][13][14][15]. The development of multi-level memory cells that are competitive with modern flash memory devices is underway [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…The non-linear optical properties of these materials open up prospects for their application in optoelectronics [6][7][8]. These compositions are also advanced materials for manufacturing non-volatile memory based on the phase transition effect (PCM) [9][10][11][12][13][14][15]. The development of multi-level memory cells that are competitive with modern flash memory devices is underway [16,17].…”
Section: Introductionmentioning
confidence: 99%