Nonvolatile field programmable spin-logic for reconfigurable computing

Abstract

We have fabricated field programmable spin-logic gates based on spin-dependent tunneling (SDT) elements. Here we show their feasibility down to a width of 0.6 μm of the SDT elements that form spin-logic gates. We further demonstrate the clocked operation of a hybrid spin-logic gate consisting of SDT elements and a semiconductor-based sense amplifier. Apart from the nonvolatility of the inputs, the output and the programming information, the experimentally demonstrated concept seems to be suitable for reconfigurable computing operations.

Exchange bias effect in alloys and compounds

“…However, in most of the cases theories were limited to specific problems where intricate structures at the interfaces were simplified. Until now, EB effects have been exploited in several technological applications such as read head of recording devices [39,40,41,42,43,44,45,46,47,48,49,50,51,52,53,54], magnetoresistive random access memories (MRRAM) [55,56,57,58,59,60,61,62,63,64,65,66,67,68,69,70,71,72,73,74,75,76] and it has been proposed for the technological applications in stabilizing magnetization of superparamagnetic nanoparticles [77,78,79,80] or to improve coercivity and energy product of the permanent magnets [81,82,83,84].…”

Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB

“…Magnetic tunnel junctions (MTJ) have gained considerable interest in recent years due to their high potential as sensor elements (1) and as programmable resistance in data storage (MRAM) (2) or even data processing (3). The basic design of a spin valve consists of a hard magnetic reference electrode separated from the soft magnetic sense or storage layer by a tunnel barrier like Al 2 O 3 .…”

Photochromism and magneto-optic response of ZnO:Mn semiconductor quantum dots fabricated by microemulsion route

“…However, all electronic materials (semiconductors) are based only on the "charge" property of the electron. The information storage in terms of magnetic recording using "spin" property of the electron has been subject of recent interest in ferromagnetic QDs systems [9,10]. In this context, DMS systems would be advantageous in the sense that in addition to the charge confinement and transport, spin transport and spin manipulation is highly feasible for storing, writing and retrieving information.…”