Nonvolatile electrical switching behavior and mechanism of functional polyimides bearing a pyrrole unit: influence of different side groups

Zhou, Zhuxin; Qu, Lunjun; Yang, Tingting; Wen, Jinglan; Zhang, Yi; Chi, Zhenguo; Liu, Siwei; Chen, Xudong; Xu, Jiarui

doi:10.1039/c6ra11615a

Cited by 9 publications

(3 citation statements)

References 51 publications

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“…Meanwhile, the electric field induced “conformation‐coupled charge transfer” could be also used to explain the nonvolatile WORM memory performance . Due to donor moieties were covalently linked with acceptor moieties by single‐bonded, under an applied field, the formation the excited state in the PI system could produce the conformation coupled charge transfer process.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile write‐once read‐many‐times memory behaviors of polyimides containing tetraphenyl fluorene core and the pendant triphenylamine or carbazole moieties

Yang

Ding

Xia

et al. 2018

J. Polym. Sci. Part A: Polym. Chem.

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To better understand the structure–property relationships, two novel aromatic diamines containing tetraphenyl fluorene (TPF) moiety through triphenylamine (TPA) unit and carbazole (Cz) unit modification are designed and synthesized, respectively. Four thermally stable and excellent solubility polyimides are prepared and characterized. The excellent film‐formation ability and thin film stability are investigated by X‐ray diffraction (XRD) and atom force microscopy (AFM) measurements, respectively. The memory devices are fabricated, PIs films with low water uptakes sandwiched between indium‐tin oxide (ITO) ground electrode and Al top electrode, and exhibit nonvolatile write‐once read‐many‐times (WORM) memory behaviors with low threshold voltages, due to increasing the retention time through regulating the energy level. The current conduction mechanisms of all devices are linearly fitted by theoretical conduction model. Molecular simulations are used to demonstrate switching mechanism and the memory effects. The experimental results provide a sight for the design‐adjustable switching voltage of memory devices. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018, 56, 1630–1644

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Section: Resultsmentioning

confidence: 99%

Nonvolatile write‐once read‐many‐times memory behaviors of polyimides containing tetraphenyl fluorene core and the pendant triphenylamine or carbazole moieties

Yang

Ding

Xia

et al. 2018

J. Polym. Sci. Part A: Polym. Chem.

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“…Up to now, through the polycondensation reactions of different electron-donating (D) moieties containing triphenylamine, [10][11][12] , carbazole, [11][12][13][14] ferrocene, 15 pyrrole, 16 oxadiazole, 17 triazole, 18 porphyrin, 19,20 and thiophene, 21 with the electron-accepting (A) moieties, functional PIs with multifarious memory deeds, involving dynamic random access memory (DRAM), 20 static random access memory (SRAM), 17 flash, 15,22 and write-once read-many-times memory (WORM), 16,23 have been wide researched. Meanwhile, molecular structure could be regulated through the introduction of flexible linkages, 24,25 fluorine atoms, 26 bulky pendant groups, 27 and unsymmetrical units.…”

Section: Introductionmentioning

confidence: 99%

Regulating the electrical resistive switching behaviors of polyimides through different steric hindrance substituents on 2,7-position of tetraphenyl fluorene diamines moieties

Nan

Fan

et al. 2022

High Performance Polymers

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Three novel polyimides (PI(TPF-Br BPDA), PI(TPF-Ph BPDA), and PI(TPF-Ph-OMe BPDA)) with tetraphenyl fluorene (TPF) were synthesized and tested. The laboratorial results showed that the constructed electronic devices exhibited different memory behaviors due to the different steric hindrance substituents (bromine atom, phenyl, and 3,5-dimethoxyphenyl) in 2,7-position of TPF molecule. The memorizers based on PI(TPF-Br BPDA) and PI(TPF-Ph BPDA) presented volatile dynamic random access memory (DRAM) feature with turn-on voltages of −2.39 and +1.45 V, as same as −1.71 and +1.74 V, separately. However, the PI(TPF-Ph-OMe BPDA) based apparatus exhibited non-volatile write-once read-many-times memory (WORM) behavior with turn-on voltage of −1.13 V, due to the more charge traps of 3,5-dimethoxyphenyl moieties and higher dipole moment. The switching mechanism was verified by quantum simulation of energy level, electrostatic potential (ESP) surface and dipole moment. These results indicated that the electrical memory performance of the synthesized TPF-based PIs could be adjusted by modifying the electron donor structure.

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“…Up to now, Ar-PIs have been reported to exhibit resistive switching characteristics in memory devices, including the nonvolatile “write once–read many” (WORM) memory, , flash memory, , volatile dynamic random access memory (DRAM), , and static random access memory (SRAM). , The Ar–PI-based resistive memory devices record data based on the low and high conductivity response under an applied voltage, in which the conductive mechanism of Ar-PIs is related to the field-induced CT formation . However, to our knowledge, most of these reported Ar-PIs are usually nonluminescent or exhibit low PLQY and ignore the relationship between the EL behavior and resistive switching behavior.…”

mentioning

confidence: 99%

Flexible Multifunctional Aromatic Polyimide Film: Highly Efficient Photoluminescence, Resistive Switching Characteristic, and Electroluminescence

Tang

Bei

et al. 2018

ACS Appl. Mater. Interfaces

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We report a flexible multifunctional aromatic polyimide (BTDBPI) that shows yellow-green fluorescence with high photoluminescence quantum yield (PLQY) of 30% in the film state. The nonvolatile "write once-read many" (WORM) characteristic in a memory device with the configuration of ITO/BTDBPI/Au indicates that BTDBPI possesses organic semiconductor behavior. Moreover, polymer light-emitting diodes (PLEDs) with the structure of ITO/PEDOT:PSS/BTDBPI/TPBI/Mg-Ag exhibits an interesting dual-emission phenomenon that originates from the electroluminescence (EL) of the BTDBPI nanometer film (yellow-green, 525 nm) and TPBI (deep blue, 380 nm), demonstrating that BTDBPI shows both the charge-transporting and EL properties.

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Nonvolatile electrical switching behavior and mechanism of functional polyimides bearing a pyrrole unit: influence of different side groups

Abstract: Influence of side groups to the nonvolatile electrical switching behaviors and its mechanism of polyimides bearing pyrrole unit were systematically studied.

Cited by 9 publications

References 51 publications

Nonvolatile write‐once read‐many‐times memory behaviors of polyimides containing tetraphenyl fluorene core and the pendant triphenylamine or carbazole moieties

Nonvolatile write‐once read‐many‐times memory behaviors of polyimides containing tetraphenyl fluorene core and the pendant triphenylamine or carbazole moieties

Regulating the electrical resistive switching behaviors of polyimides through different steric hindrance substituents on 2,7-position of tetraphenyl fluorene diamines moieties

Flexible Multifunctional Aromatic Polyimide Film: Highly Efficient Photoluminescence, Resistive Switching Characteristic, and Electroluminescence

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