Nonuniformity in Ultrathin SiO<sub>2</sub>on Si(111) Characterized by Conductive Atomic Force Microscopy

Hasunuma, Ryu; Okamoto, Junichi; Tokuda, Norio; Yamabe, Kikuo

doi:10.1143/jjap.43.7861

Cited by 27 publications

(23 citation statements)

References 4 publications

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“…For example, for the dielectric films with a thickness of approximately 3nm, a variation of a few atomic layers is equivalent to approximately 10 % of the total film thickness. Such film thickness variation also induces a fluctuation in the direct tunnel leakage current [1].…”

Section: Introductionmentioning

confidence: 99%

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Hayashi

Hasunuma

Yamabe

2011

KEM

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Abstract.Atomic force microscopy measurements are carried out on the surface and interface of SiO 2 thermally grown on an atomically flat Si surface, and the uniformity of thickness on an atomic scale is investigated. Protuberances on the surface of SiO 2 grown at 800 ºC in 3.8 % O 2 diluted by argon at the atmospheric pressure are generated in the initial stage of oxidation and subsequently increases in height at the same positions. The surface RMS value of SiO 2 linearly increases up to the thickness of approximately 5 nm, which almost corresponds to what was called the initial oxidation thickness. This fact indicates that the roughness increase is related to the re-oxidation of SiO emitted from the Si/SiO 2 interface during the initial oxidation. Additionally, the surface RMS value is saturated at a value of approximately 0.13 nm. A correspondence between the position of the dimples on the surface and the positions of the protuberances at the interface is also clear. The fact is the direct evidence of the local thinning of the thermally grown SiO 2 films. Based on these results, an atomic scale thermal oxidation mechanism is discussed.

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Section: Introductionmentioning

confidence: 99%

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Hayashi

Hasunuma

Yamabe

2011

KEM

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“…One of the possible origins of nonuniformity is thickness fluctuation in SiO 2 films, as we previously reported. 5,9) Figure 1 shows typical atomic force microscopy (AFM) images of the (a) SiO 2 surface and (b) interface of a SiO 2 film with a thickness of approximately 10.4 nm grown on an atomically flat Si(111) surface. 9) Note here that both images were taken at exactly the same position, indicating that the interface shown in Fig.…”

Section: Two-dimensional Thickness Uniformitymentioning

confidence: 99%

“…We previously reported that two-dimensional fluctuation in tunneling current through ultrathin SiO 2 films can be explained by the nanoscale nonuniformity of the film thickness originating from the roughness of the SiO 2 surface and interface. 5) Thickness fluctuation should affects device characteristics, especially when it is largely scaled down. The results clearly suggest that, for better understanding of dielectric degradation during electrical stress application and its reliability, we should return to focus what happens in the formation of dielectric films.…”

Section: Introductionmentioning

confidence: 99%

Reliability factors of ultrathin dielectric films based on highly controlled SiO₂films

Hasunuma¹,

Kawamura²,

Yamabe³

2018

Jpn. J. Appl. Phys.

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Two main factors determine the reliability of ultrathin SiO 2 films thermally grown on Si when subjected to long-term electrical stress. One of them is two-dimensional thickness uniformity for suppressing the decrease in Weibull slope. The other is film density distribution, which affects the degradation rate during application of high electric stress. The importance of thermal process optimization in inhibiting density fluctuation is demonstrated.

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“…It is well known that a smooth surface can be realized on Si wafers through wet HF cleaning at room temperature or by high-temperature annealing [4][5][6]. Wet HF cleaning provides an atomically flat surface on Si(1 1 1), but it is difficult to maintain the obtained flatness because the surface structure changes at low temperatures [7].…”

Section: Introductionmentioning

confidence: 99%

Variation in Si(100) surface roughness caused by H-termination during high-temperature Ar annealing

Araki

Isogai²,

Takeda³

et al. 2011

Journal of Crystal Growth

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Nonuniformity in Ultrathin SiO₂on Si(111) Characterized by Conductive Atomic Force Microscopy

Cited by 27 publications

References 4 publications

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Reliability factors of ultrathin dielectric films based on highly controlled SiO₂films

Variation in Si(100) surface roughness caused by H-termination during high-temperature Ar annealing

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Nonuniformity in Ultrathin SiO2on Si(111) Characterized by Conductive Atomic Force Microscopy

Cited by 27 publications

References 4 publications

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface

Reliability factors of ultrathin dielectric films based on highly controlled SiO2films

Variation in Si(100) surface roughness caused by H-termination during high-temperature Ar annealing

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About

Nonuniformity in Ultrathin SiO₂on Si(111) Characterized by Conductive Atomic Force Microscopy

Reliability factors of ultrathin dielectric films based on highly controlled SiO₂films