Nonuniform Effect of Carrier Separation Efficiency and Light Absorption in Type-II Perovskite Nanowire Solar Cells

Wang, Weiping; He, Jialun; Cao, Yiyan; Kong, Lijing; Zheng, Xiang; Wu, Yaping; Chen, Xiaohong; Li, Shuping; Wu, Zhiming; Kang, Junyong

doi:10.1186/s11671-017-1912-4

Cited by 15 publications

(11 citation statements)

References 34 publications

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“…Such heterostructures can tailor intrinsic electronic properties and improve the optical absorption [22], showing emerging and designable features [13,23]. For example, the built-in electrical field [24] or energy level difference [25] induced by TMD heterostructures should accelerate photocarrier separation [26], suppress photocarrier recombination [17,27] and lower dark current [28] as well, which is beneficial for achieving highperformance photodetection. Besides, Wang's group [29] has certified suppressed electron-hole (e-h) recombination in lateral heterostructures.…”

Section: Introductionmentioning

confidence: 99%

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Zhu

et al. 2021

Nanoscale Res Lett

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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Section: Introductionmentioning

confidence: 99%

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Zhu

et al. 2021

Nanoscale Res Lett

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“…Such heterostructures can tailor intrinsic electronic properties and improve the optical absorption [19], showing emerging and designable features [13,20]. For example, the builtin electrical field [21] or energy level difference [22] induced by TMD heterostructures should accelerate photocarrier separation, suppress photocarrier recombination [17,23] and lower dark current [24] as well, which is beneficial for achieving high-performance photodetection.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Li¹,

Zhu²,

Du³

et al. 2021

Preprint

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition (CVD) approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 x 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is adverse to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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“…For instance, Zhang et al fabricated a MAPbI 3 /MAPbI x Br 3 − x heterostructure with a type-II band structure and achieved HTL-free PSCs [33]. In essence, it is an ideal approach to directly reduce recombination losses through the design of a gradient band structure in the perovskite light absorption layer [34,35], which supports the carrier separation as fast as possible. However, to the best of our knowledge, it has not been reported so far about the fabrication of perovskite materials with a gradient band structure.…”

Section: Introductionmentioning

confidence: 99%

Gradient Engineered Light Absorption Layer for Enhanced Carrier Separation Efficiency in Perovskite Solar Cells

Zhu

Zhang

et al. 2020

Nanoscale Res Lett

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Carrier transport behavior in the perovskite light absorption layer significantly impacts the performance of perovskite solar cells (PSCs). In this work, reduced carrier recombination losses were achieved by the design of a band structure in perovskite materials. An ultrathin (PbI 2 /PbBr 2) n film with a gradient thickness ratio was deposited as the lead halide precursor layer by a thermal evaporation method, and PSCs with a gradient band structure in the perovskite absorption layer were fabricated by a two-step method in ambient atmosphere. For comparison, PSCs with homogeneous perovskite materials of MAPbI 3 and MAPbI x Br 3 − x were fabricated as well. It is found that the gradient type-II band structure greatly reduces the carrier lifetime and enhances the carrier separation efficiency. As a result, the PSCs with a gradient band structure exhibit an average power conversion efficiency of 17.5%, which is 1-2% higher than that of traditional PSCs. This work provides a novel method for developing high-efficiency PSCs.

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Nonuniform Effect of Carrier Separation Efficiency and Light Absorption in Type-II Perovskite Nanowire Solar Cells

Cited by 15 publications

References 34 publications

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Gradient Engineered Light Absorption Layer for Enhanced Carrier Separation Efficiency in Perovskite Solar Cells

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